Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C -

Rds (max) @ ID, VGS 55 mOhm @ 3.2A, 10V

VGS (TH) (max) @ Id 1.4V @ 250µA

Gate Charge (Qg) @ VGS 4.76nC @ 4.5V

Input Capacitor (Ciss) @ 432pF of Vds @ 15V

Power - 780mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 2.4 A

RDS - at 55@10V mOhm

Maximum gate-source voltage ±12 V

Typical turn-on delay time 6.4 ns

Typical rise time 9.9 ns

Typical turn-off delay time 15.1 ns

Typical fall time 3.5 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±12

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Channel TypeN

Package Tape and_Reel

Maximum drain-source resistance 55@10V

Maximum drain-source voltage 30

Number of components per chip 1

Supplier Package SOT-23

Maximum Power Dissipation 780

Maximum continuous drain current 2.4

Number of pins 3

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Vgs(th) (max) @ Id 1.4V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS 55 mOhm @ 3.2A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 780mW max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS 432pF @ 15V

Gate Charge (Qg) @ VGS 4.76nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesNTR4170NT1GOSCT

CategoryPower MOSFET

Dimensions 3.04 x 1.4 x 1.01mm

Height 1.01mm

Length 3.04mm

Maximum drain-source resistance 110 mΩ

Maximum operating temperature +150 °C

Maximum power dissipation 1.25 W

Minimum operating temperature -55 °C

Package Type SO-23

Typical Gate Charge @ VGS 4.76 nC @ 4.5 V

Typical Input Capacitance @ VDS 432 pF @ 15 V

Width 1.4mm

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Configure Single

Source breakdown voltage +/- 12 V

Continuous drain current 4 A

Forward Transconductance - Min 8 S

Installation style SMD/SMT

RDS(ON) 64 mOhms

Power dissipation 1.25 W

Package/Case TO-236

Rise time 9.9 ns

Drain-source breakdown voltage 30 V

RoHS RoHS Compliant

Fall Time 3.5 ns

Drain current (max) 4 A

Frequency (max) Not Required MHz

Gate-source voltage (max) ?12 V

Output Power (Max) Not Required W

Noise Figure Not Required dB

Drain-source on-resistance 0.055 ohm

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_ Drain-source turn-on voltage 30 V

Power Gain Not Required dB

Arc hardeningNo

Continuous Drain Current Id: 4A

Drain Source Voltage Vds:30V

On Resistance Rds(on):45mohm

Rds(on) Test Voltage Vgs: 10V

Threshold Voltage Vgs: 1V

No. of Pins :3

Weight (kg) 0