Rohs Lead free / RoHS Compliant

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 20V

Current - Continuous Drain (No.) @ 25°C 750mA

Rds (max) @ ID, VGS 90 mOhm @ 1.2A, 10V

VGS (TH) (max) @ Id 2.4V @ 250µA

Gate Charge (Qg) @ VGS -

Input Capacitor (Ciss) @ 125pF of Vds @ 5V

Power - 400mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 20 V

Maximum continuous drain current 0.75 A

RDS - at 90@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 2.5 ns

Typical rise time 1 ns

Typical turn-off delay time 16 ns

Typical fall time 8 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Channel TypeN

Package Tape and_Reel

Maximum drain-source resistance 90@10V

Maximum drain-source voltage 20

Number of components per chip 1

Supplier Package SOT-23

Maximum Power Dissipation 400

Maximum continuous drain current 0.75

Number of pins 3

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 750mA (Ta)

Vgs(th) (max) @ Id 2.4V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On State Rds (max) @ Id, V GS 90 mOhm @ 1.2A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 400mW max

Drain to source voltage (Vdss) 20V

Input Capacitance (Ciss) @ VDS 125pF @ 5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesMGSF1N02LT1GOSCT

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Configure Single

Source breakdown voltage +/- 20 V

Continuous drain current 750 mA

Installation style SMD/SMT

RDS(ON) 90 mOhms

Power dissipation 0.4 W

Minimum Operating Temperature - 55 C

Package/Enclosure SOT-23

Rise time 1 ns

Maximum operating temperature + 150 C

Drain-source breakdown voltage 20 V

RoHS RoHS Compliant

Fall Time 1 ns

Drain current (max) 0.75 A

Frequency (max) Not Required MHz

Gate-source voltage (max) ?20 V

Output Power (Max) Not Required W

Noise Figure Not Required dB

Drain-source on-resistance 0.09 ohm

Operating temperature range -55C to 150C

Packaging Type SOT-23

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_ Drain-source turn-on voltage 20 V

Power Gain Not Required dB

Arc hardeningNo

Continuous Drain Current Id: 750mA

Drain Source Voltage Vds: 20V

On Resistance Rds(on):0.075ohm

Rds(on) Test Voltage Vgs: 10V

Threshold Voltage Vgs:1.7V

Power consumption: 400mW

Operating Temperature Min :-55°C

Operating Temperature Max :150°C

Transistor Case Style :SOT-23

No. of Pins :3

MSL :MSL 1 - Unlimited

SVHC : No SVHC (16-Dec-2013)

Weight (kg) 0.000033

Tariff No. 85412900

Current Id Max: 750mA

Current Temperature :25°C

External depth: 2.5mm

External Length / Height: 1.12mm

Outer width: 3.05mm

Full Power Rating Temperature :25°C

No. of Transistors: 1

Operating temperature range: -55°C to +150°C

Pulse Current Idm: 2A

SMD Marking:N2

Tape width: 8mm

Termination Type: SMD

Voltage Vds Typ: 20V

Voltage Vgs Max:1.7V

Voltage Vgs Rds on Measurement: 10V

Voltage Vgs th Max: 2.4V

associated PMV60EN

MGSF1N02LT1G

RE906