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BC847PN-7-F Data Sheet

Manufacturer: Diodes Incorporated

Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Case: SOT-363-6

Transistor Polarity: NPN, PNP

Configuration: Dual

Collector-emitter maximum voltage VCEO: 45 V

Collector-Base Voltage VCBO: 50 V

Emitter-Base Voltage VEBO: 6 V

Collector-Emitter Saturation Voltage: 600 mV

Maximum DC Collector Current: - 200 mA, + 200 mA

Gain bandwidth product fT: 300 MHz

Minimum operating temperature: - 65 C

Maximum operating temperature: + 150 C

Series: BC847P

Height: 1 mm

Length: 2.2 mm

Package: Cut Tape

Package: MouseReel

Package: Reel

Width: 1.35 mm

Trademark: Diodes Incorporated

DC Collector/Base Gain hfe Min: 200

Pd-Power Dissipation: 200 mW

Product Type: BJTs - Bipolar Transistors

Factory Packing Quantity: 3000

Subcategory: Transistors

Unit weight: 6 mg