NTR4503NT1G ON 30V 110mOhm 0.42W MOSFET - SOT-23 advantage product original spot imported hot sale

NTR4503NT1G product detailed specifications

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C 1.5A

Rds (max) @ ID, VGS110 mOhm @ 2.5A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS7nC @ 10V

Input Capacitor (Ciss) @ 250pF of Vds @ 24V

Power - 420mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 2 A

RDS - at 110@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 5.8|4.8 ns

Typical rise time 5.8|6.7 ns

Typical turn-off delay time 14|13.6 ns

Typical fall time 1.6|1.8 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Channel TypeN

Package Tape and_Reel

Maximum drain-source resistance 110@10V

Maximum drain-source voltage 30

Number of components per chip 1

Supplier Package SOT-23

Maximum Power Dissipation 730

Maximum continuous drain current2

Number of pins 3

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 1.5A (Ta)

Vgs(th) (max) @ Id3V @ 250µA

Package/Enclosure TO-236-3, SC-59, SOT-23-3

Supplier Equipment Package SOT-23-3 (TO-236)

Other namesNTR4503NT1GOSTR

On-state Rds (max) @ Id, V GS110 mOhm @ 2.5A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 420mW max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS250pF @ 24V

Gate Charge (Qg) @ VGS7nC @ 10V

RoHS Directive Lead free / RoHS Compliant

CategoryPower MOSFET

Dimensions 3.04 x 1.4 x 1.01mm

Height 1.01mm

Length 3.04mm

Maximum drain-source resistance 140 mΩ

Maximum operating temperature +150 °C

Maximum power dissipation 0.73 W

Minimum operating temperature -55 °C

Package Type SO-23

Typical Gate Charge @ VGS1.9 nC @ 4.5 V, 3.6 nC @ 10 V

Typical Input Capacitance @ VDS130 pF @ 24 V, 135 pF @ 15 V

Width 1.4mm

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Configure Single

Source breakdown voltage +/- 20 V

Continuous drain current 2.5 A

Forward Transconductance - Min 5.3 S

Installation style SMD/SMT

RDS(ON) 105 mOhms

Power dissipation 0.73 W

Rise time 5.8 ns, 6.7 ns

Drain-source breakdown voltage 30 V

RoHSRoHS Compliant

Fall time 5.8 ns, 6.7 ns

Drain current (max) 2 A

Frequency (Max) Not Required MHz

Gate-source voltage (max)? 20 V

Output power (max) Not Required W

Noise Figure Not Required dB

Drain-source on-resistance 0.11 ohm

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 30 V

Power Gain Not Required dB

Arc hardeningNo

Continuous Drain Current Id: 2.5A

Drain Source Voltage Vds: 30V

On Resistance Rds(on): 140mohm

Rds(on) Test Voltage Vgs:4.5V

Threshold Voltage Vgs: 1.75V

Power consumption: 730mW

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:MSL 1 - Unlimited

SVHC: No SVHC (20-Jun-2013)

Current Id Max: 2.5mA

Operating temperature range: -55°C to +150°C

Termination Type: SMD

Voltage Vds Type: 30V

Voltage Vgs Max: 1.75V

Voltage Vgs Rds on Measurement: 10V

Weight (kg)0.000008

Tariff No.85412900

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Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

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For more models, please inquire:

Xinrui Electronics (Hong Kong) is a professional supplier of integrated circuits and has many years of sales experience in our bank! With a large stock of stock, integrity-based, customer first, the quality of products for customers!

Due to the large number of company models, it is impossible to upload them one by one. If you can't find the product you want on the website, please contact the salesperson. Our company can provide electronic components distribution service.

Company: Xinrui Electronics (Hong Kong) Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

On March 27, the latest report of IC Insights pointed out that the market share of the United States in the global IC design field last year was 68%, only one percentage point lower than that in 2010. Mainland China has grown the fastest since 2010 and now has a 13% market share.

The report pointed out that since 2010, the fastest growing market share in IC design has been in mainland China, where suppliers held 13% of the market last year, compared to just 5% in 2010.

Among the top five fastest-growing IC design companies (with sales of more than $200 million) last year, except Nvidia, the other four are mainland Chinese companies, including Bitmain, Beijing Silicon, Allwinner and HiSilicon. But if you exclude HiSilicon (more than 90% of its sales come from its parent company Huawei) and internal transfers from ZTE and Datang, the Chinese IC design company's market share drops by about half to just 7%.

Among them, the most significant growth in 2018 was Bitmain, with sales reaching a growth rate of 197%. The company's revenue has grown rapidly over the past three years, from $278 million in 2016 to $2.5 billion in 2017, and is estimated to have revenue of $4.4 billion in 2018.

Interestingly, Bitmain is not a semiconductor company. Bitmain is a supplier of mining machine chips for the cryptocurrency Bitcoin. Bitmain’s main revenue mainly comes from the foundry leader TSMC.

IC Insights believes that the sharp rise and fall in Bitmain’s cryptocurrency mining equipment sales since 2016 is the main reason for TSMC’s sales volatility over the past two years.

Looking at other regions, European companies accounted for only 2% of the IC design market in 2018, compared to 4% in 2010. This reduction in share is partly due to Qualcomm's acquisition of CSR, the UK's second-largest IC design company, and Intel's acquisition of Germany's third-largest IC design company, Lantiq. The acquisitions left UK-based Dialog ($1.44 billion in 2018 sales) and Norway's Nordic ($271 million in 2018 sales) the only two European ICs to squeeze into the top 50 last year design company.

Last year, only one IC design company in South Korea and Japan entered the top 50 in the world, and Megachips in Japan grew by 19% last year, with sales reaching 760 million US dollars. South Korea's Silicon Work grew 17 percent to $718 million.

Overall, sales in the global IC design market increased by $8.3 billion in 2018, an 8 percent increase over 2017.

Twenty-one of the top 50 IC design suppliers experienced double-digit growth last year, while five suffered double-digit declines.

IC Insights believes that most large IC design suppliers will continue to perform well and will help drive significant sales growth at major IC foundries such as TSMC, GF, Samsung, UMC, etc. In addition, with increasing barriers to entry (i.e. high design costs, increasingly difficult access to VC funding, etc.) and fewer new IC design companies, IC Insights believes that the continued growth in the total number of IC design companies listed will This has led to a top-heavy trend in the semiconductor industry.