IRF630N

FET type N-channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 200V

Current - Continuous Drain (Id) (at 25°C) 9.3A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

Different Id, Rds On (max) at Vgs 300 milliohms @ 5.4A, 10V

Vgs(th) (max) at different Ids 4V @ 250μA

Gate charge (Qg) at different Vgs (max) 35nC @ 10V

Vgs (max) ±20V

Input Capacitance (Ciss) at Vds (Maximum) 575pF @ 25V

FET function-

Power Dissipation (Max) 82W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Supplier Device Package TO-220AB

Package/Case TO-220-3

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