SI2306BDS-T1-GE3 Si2306BDS Series N-Channel 30V 47 mOhm 0.75 W Surface Mount Mosfet - TO-236

SI2306BDS-T1-GE3 Product Specifications

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (Number) @ 25°C 3.16A

Rds (max) @ ID, VGS47 mOhm @ 3.5A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS4.5nC @ 5V

Input Capacitor (Ciss) @ 305pF of Vds @ 15V

Power - 750mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3TO-236

Channel Mode Enhancement

Maximum continuous drain current 3.16 A

RDS - at 47@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 7 ns

Typical turn-off delay time 14 ns

Typical fall time 6 ns

Install the Surface Mount

Standard Packaging Tape & Reel

P(TOT) 0.75W

Match code SI2306BDS

Unit pack 3000

Standard lead time 15 weeks

MOQ 3000

Polarized N-CHANNEL

Lead-free DefinRoHS-conform

I(D)4A

V(DS) 30V

R (on DS) 0.038Ohm

FET FeaturesLogic Level Gate

Package Tape & Reel (TR)

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 3.16A (Ta)

Vgs(th) (max) @ Id3V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS47 mOhm @ 3.5A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 750mW max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS305pF @ 15V

Gate Charge (Qg) @ VGS4.5nC @ 5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2306BDS-T1-GE3CT

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Minimum Operating Temperature - 55 C

Configure Single

Source breakdown voltage +/- 20 V

Continuous drain current 3.16 A

Installation style SMD/SMT

RDS(ON)47mOhms

Power dissipation 750 mW

Trade nameTrenchFET

Package/Case TO-236-3

Part number alias SI2306BDS-GE3

Rise time 12 ns

Maximum operating temperature + 150 C

Drain-source breakdown voltage 30 V

RoHSRoHS Compliant

Fall time 12 ns

Gate-source voltage (max)? 20 V

Drain-source on-resistance 0.047 ohm

Operating temperature range -55C to 150C

Package TypeTO-236

Number of pins 3

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain-source turn-on voltage 30 V

Arc hardeningNo

Continuous Drain Current Id: 4A

Drain Source Voltage Vds: 30V

On Resistance Rds(on): 65mohm

Rds(on) Test Voltage Vgs: 20V

Threshold Voltage Vgs: 3V

No. of Pins: 3

Weight (kg)0.000001

Tariff No.85412100