SI2305CDS-T1-GE3 -8 V 5.0 A 35 Mohm Drain Source On Resistance 12 nC Qg at 4.5 V SOT-23

SI2305CDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 8V

Current - Continuous Drain (No.) @ 25°C 5.8A

Rds (max) @ ID, VGS35 mOhm @ 4.4A, 4.5V

VGS (TH) (max) @ Id1V @ 250µA

Gate Charge (Qg) @ VGS30nC @ 8V

Input Capacitor (Ciss) @ 960pF of Vds @ 4V

Power - 1.7W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

channel type P

Channel Mode Enhancement

Maximum drain-source voltage 8 V

Maximum continuous drain current 4.4 A

RDS - at 35@4.5V mOhm

Maximum gate-source voltage ±8 V

Typical turn-on delay time 20 ns

Typical turn-off delay time 40 ns

Typical fall time 10 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±8

Packing width 1.4(Max)

PCB3

Maximum Power Dissipation 960

Maximum drain-source voltage8

EU RoHS Directive Compliant

Maximum drain-source resistance 35@4.5V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 4.4

Package Tape and_Reel

Lead Shape Gull-wing

P(TOT) 1.25W

Match code SI2305CDS-T1-GE3

Unit pack 3000

Standard lead time 15 weeks

MOQ 3000

Polarized P-CHANNEL

Lead-free DefinRoHS-conform

I (D) 3.5A

V(DS)8V

R (on DS) 0.052Ohm

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 4.4A (Ta), 5.8A (Tc)

Vgs(th) (max) @ Id1V @ 250µA

Drain to source voltage (Vdss) 8V

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS35 mOhm @ 4.4A, 4.5V

FET Type MOSFET P-Channel, Metal Oxide

Power - 1.7W max

Package/Enclosure TO-236-3, SC-59, SOT-23-3

Input Capacitor (Ciss) @ VDS960pF @ 4V

Gate Charge (Qg) @ VGS30nC @ 8V

RoHS Directive Lead free / RoHS Compliant

Other namesSI2305CDS-T1-GE3CT

CategoryPower MOSFET

Configure Single

Dimensions 3.04 x 1.4 x 1.02mm

Height 1.02mm

Length 3.04mm

Maximum drain-source resistance 0.035 Ω

Maximum operating temperature +150 °C

Maximum power dissipation 0.96 W

Minimum operating temperature -55 °C

Packaging Type SOT-23

Typical Gate Charge @ VGS12 nC V @ 4.5, 20 nC V @ 8

Typical Input Capacitance @ VDS960 pF V @ 4

Width 1.4mm

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity P-Channel

Source breakdown voltage +/- 8 V

Continuous drain current 4.4 A

Installation style SMD/SMT

RDS(ON) 35 mOhms at 4.5 V

Power dissipation 960 mW

Part Number Alias SI2305CDS-GE3

Rise time 20 ns

Drain-source breakdown voltage 8 V

RoHSRoHS Compliant

Fall time 20 ns

Gate-source voltage (max) ~8 V

Drain-source on-resistance 0.035 ohm

Operating temperature range -55C to 150C

Polarity P

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain-source turn-on voltage 8 V

Arc hardeningNo

Remove Compliant

Continuous Drain Current Id:-5.8A

Drain Source Voltage Vds:-8V

On Resistance Rds(on): 28mohm

Rds(on) Test Voltage Vgs:-4.5V

Threshold Voltage Vgs:-400mV

Power consumption: 960mW

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:-

Current Id Max:-5.8A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max:8V

Weight (kg)0.000008

Tariff No.85412900