SI2302CDS-T1-GE3 20V 710mW SOT-23-3 Power MOSFET

SI2302CDS-T1-GE3 Product Specifications

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 20V

Current - Continuous Drain (Number) @ 25°C 2.6A

Rds (max) @ ID, VGS57 mOhm @ 3.6A, 4.5V

VGS(TH) (max) @Id850mV @250µA

Gate Charge (Qg) @ VGS5.5nC @ 4.5V

Input Capacitance (Ciss) @ Vds -

Power - 710mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 20 V

Maximum continuous drain current 2.6 A

RDS - at 57@4.5V mOhm

Maximum gate-source voltage ±8 V

Typical turn-on delay time 8 ns

Typical rise time 7 ns

Typical turn-off delay time 30 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Product TypeMOSFET

RoHSRoHS Compliant

Transistor Polarity N-Channel

Drain-source breakdown voltage 20 V

Source breakdown voltage +/- 8 V

Continuous drain current 2.6 A

Anti-Drain Source RDS(ON) 0.057 Ohms

Configure Single

Maximum operating temperature + 150 C

Installation style SMD/SMT

Package/Enclosure SOT-23-3

Package Reel

Fall Time 7 ns

Minimum Operating Temperature - 55 C

Power dissipation 710 mW

Rise time 7 ns

Factory packing quantity 3000

Part number alias SI2302CDS-GE3

Maximum gate-source voltage ±8

Packing width 1.4(Max)

PCB3

Maximum Power Dissipation 710

Maximum drain-source voltage 20

EU RoHS Directive Compliant

Maximum drain-source resistance 57@4.5V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Channel TypeN

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 2.6

Lead Shape Gull-wing

P(TOT) 0.71W

Match code SI2302CDS

Unit pack 3000

Standard lead time 15 weeks

MOQ 3000

Polarized N-CHANNEL

Lead-free DefinRoHS-conform

I (D) 2.6A

V(DS) 20V

R (on DS) 0.075Ohm

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 2.6A (Ta)

Vgs(th) (max) @Id850mV @250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS57 mOhm @ 3.6A, 4.5V

FET Type MOSFET N-Channel, Metal Oxide

Power - 710mW max

Drain to source voltage (Vdss) 20V

Gate Charge (Qg) @ VGS5.5nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2302CDS-T1-GE3CT

CategoryPower MOSFET

Dimensions 3.04 x 1.4 x 1.02mm

Height 1.02mm

Length 3.04mm

Maximum drain-source resistance 0.057 Ω

Maximum power dissipation 0.71 W

Packaging Type SOT-23

Typical Gate Charge @ VGS3.5 nC V @ 4.5

Width 1.4mm

RDS(ON) 57 mOhms

Drain current (max) 2.6 A

Frequency (Max) Not Required MHz

Gate-source voltage (max) ~8 V

Output power (max) Not Required W

Noise Figure Not Required dB

Drain-source on-resistance 0.057 ohm

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 20 V

Power Gain Not Required dB

Arc hardeningNo

Continuous Drain Current Id: 2.9A

Drain Source Voltage Vds: 20V

On Resistance Rds(on): 57mohm

Rds(on) Test Voltage Vgs:8V

Threshold Voltage Vgs: 850mV

Power consumption: 710mW

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:-

Current Id Max: 2.9A

Junction Temperature Tj Max: 150°C

Operating temperature range: -55°C to +150°C

Termination Type: SMD

Voltage Vds Type: 20V

Voltage Vgs Max:850mV

Voltage Vgs Rds on Measurement: 4.5V

Voltage Vgs th Max: 0.85V

Voltage Vgs th Min: 0.4V

Weight (kg)0.000008

Tariff No.85412900

associatedSI2302CDS-T1-GE3

EYGA091203SM