SI2303CDS-T1-GE3 VISHAY 30 V 0.19 Ohm Surface Mount Power MosFet - SOT-23-3

SI2303CDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET Features Standard

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C 2.7A

Rds (max) @ ID, VGS190 mOhm @ 1.9A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS8nC @ 10V

Input Capacitance (Ciss) @ 155pF of Vds @ 15V

Power - 2.3W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

channel type P

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 1.9 A

RDS - at 190@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 36 ns

Typical rise time 37 ns

Typical turn-off delay time 12 ns

Typical fall time 9 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Product TypeMOSFET

RoHSRoHS Compliant

Transistor Polarity P-Channel

Drain-source breakdown voltage 30 V

Source breakdown voltage +/- 20 V

Continuous drain current 1.9 A

Anti-Drain Source RDS(ON) 0.19 Ohms

Configure Single

Maximum operating temperature + 150 C

Installation style SMD/SMT

Package/Enclosure SOT-23-3

Package Reel

Fall Time 37 ns

Minimum Operating Temperature - 55 C

Power dissipation 1 W

Rise time 37 ns

Factory packing quantity 3000

Part number alias SI2303CDS-GE3

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB3

Maximum power dissipation 1000

Maximum drain-source voltage 30

EU RoHS Directive Compliant

Maximum drain-source resistance 190@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 1.9

Lead Shape Gull-wing

P(TOT) 2.3W

Match code SI2303CDS

Unit pack 3000

Standard lead time 15 weeks

MOQ 3000

Polarized P-CHANNEL

Lead-free DefinRoHS-conform

I (D) 2.7A

V(DS) 30V

R (on DS) 0.158Ohm

FET Features Standard

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 2.7A (Tc)

Vgs(th) (max) @ Id3V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS190 mOhm @ 1.9A, 10V

FET Type MOSFET P-Channel, Metal Oxide

Power - 2.3W max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS155pF @ 15V

Gate Charge (Qg) @ VGS8nC @ 10V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2303CDS-T1-GE3CT

CategoryPower MOSFET

Dimensions 3.04 x 1.4 x 1.02mm

Height 1.02mm

Length 3.04mm

Maximum drain-source resistance 0.19 Ω

Maximum power dissipation 1 W

Packaging Type SOT-23

Typical Gate Charge @ VGS2 nC V @ 4.5, 4 nC V @ 10

Typical Input Capacitance @ VDS155 pF V @ 15

Width 1.4mm

RDS(ON) 190 mOhms

Gate-source voltage (max)? 20 V

Drain-source on-resistance 0.19 ohm

Operating temperature range -55C to 150C

Polarity P

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain-source turn-on voltage 30 V

Arc hardeningNo

Continuous Drain Current Id:-2.7A

Drain Source Voltage Vds:-30V

On Resistance Rds(on): 0.158ohm

Rds(on) Test Voltage Vgs:-10V

Threshold Voltage Vgs:-3V

Power consumption: 1W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:MSL 1 - Unlimited

Current Id Max: -1.9A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max:-20V

Weight (kg)0.000008

Tariff No.85412900

associatedD00840

MC33260

3209885-M

SI2303CDS-T1-GE3