SI2304BDS-T1-GE3 Single N-Channel 30V 0.07Ohm 0.75W Surface Mount Power Mosfet - SOT-23-3

SI2304BDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C 2.6A

Rds (max) @ ID, VGS 70 mOhm @ 2.5A, 10V

VGS (TH) (max) @ Id 3V @ 250µA

Gate Charge (Qg) @ VGS 4nC @ 5V

Input Capacitor (Ciss) @ 225pF of Vds @ 15V

Power - 750mW max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 2.6 A

RDS - at 70@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 7.5 ns

Typical rise time 12.5 ns

Typical turn-off delay time 19 ns

Typical fall time 15 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB 3

Maximum Power Dissipation 750

Maximum drain-source voltage 30

EU RoHS Directive Compliant

Maximum drain-source resistance 70@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Channel TypeN

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 2.6

Package Tape and_Reel

Lead Shape Gull-wing

unit pack 0

MOQ 1

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 2.6A (Ta)

Vgs(th) (max) @ Id 3V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS 70 mOhm @ 2.5A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 750mW max

Drain to source voltage (Vdss) 30V

Input Capacitance (Ciss) @ VDS 225pF @ 15V

Gate Charge (Qg) @ VGS 4nC @ 5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2304BDS-T1-GE3CT

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Configure Single

Source breakdown voltage +/- 20 V

Continuous drain current 2.6 A

Installation style SMD/SMT

RDS(ON) 70 mOhms

Power dissipation 750 mW

Minimum Operating Temperature - 55 C

Package/Case TO-236-3

Part number alias SI2304BDS-GE3

Rise time 12.5 ns

Maximum operating temperature + 150 C

Drain-source breakdown voltage 30 V

RoHS RoHS Compliant

Fall Time 12.5 ns

Continuous Drain Current Id: 3.2A

Drain Source Voltage Vds:30V

On Resistance Rds(on): 105mohm

Rds(on) Test Voltage Vgs: 20V

Threshold Voltage Vgs: 3V

No. of Pins :3

Weight (kg) 1

Tariff No. 85412900