SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.3A 3-Pin SOT-23

SI2304DDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (Number) @ 25°C 3.3A

Rds (max) @ ID, VGS60 mOhm @ 3.2A, 10V

VGS (TH) (max) @ Id2.2V @ 250µA

Gate Charge (Qg) @ VGS6.7nC @ 10V

Input Capacitor (Ciss) @ 235pF of Vds @ 15V

Power - 1.7W max

Mounting Type*_Pack/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 3.3 A

RDS - at 60@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 12 ns

Typical rise time 50 ns

Typical fall time 22 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB3

Maximum Power Dissipation 1100

Maximum drain-source voltage 30

EU RoHS Directive Compliant

Maximum drain-source resistance 60@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Channel TypeN

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 3.3

Package Tape and_Reel

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 3.3A (Ta), 3.6A (Tc)

Vgs(th) (max) @Id2.2V @250µA

Drain to source voltage (Vdss) 30V

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS60 mOhm @ 3.2A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 1.7W max

Input Capacitor (Ciss) @ VDS235pF @ 15V

Gate Charge (Qg) @ VGS6.7nC @ 10V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2304DDS-T1-GE3CT

Continuous drain current 3.3 A

Gate-source voltage (max)? 20 V

Power dissipation 1.1 W

Drain-source on-resistance 0.06 ohm

Operating temperature range -55C to 150C

Packaging Type SOT-23

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain-source turn-on voltage 30 V

Arc hardeningNo

Remove Compliant

Transistor Polarity: N Channel

Continuous Drain Current Id: 3.6A

Drain Source Voltage Vds: 30V

On Resistance Rds(on): 0.049ohm

Rds(on) Test Voltage Vgs:10V

Threshold Voltage Vgs: 2.2V

Power consumption: 1.1W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:-

Current Id Max: 3.3A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max: 20V

Weight (kg)0.000008

Tariff No.85412900