SI2333DDS-T1-GE3 Single P-Channel 12V 0.028Ω 35nC Surface Mount Power Mosfet - SOT-23

SI2333DDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET Features Logic Level Gate, 1.5V Drive

Drain-to-source voltage (VDSS) 12V

Current - Continuous Drain (Number) @ 25°C 6A

Rds (max) @ ID, VGS 28 mOhm @ 5A, 4.5V

VGS (TH) (max) @ Id 1V @ 250µA

Gate Charge (Qg) @ VGS 35nC @ 8V

Input Capacitor (Ciss) @ 1275pF of Vds @ 6V

Power - 1.7W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Dynamic Catalog P-Channel Logic Level Gate FETs###/catalog/en/partgroup/p-channel-logic-level-gate-fets/16565?mpart=SI2333DDS-T1-GE3&vendor=742&WT.z_ref_page_type=Part%20Search&WT.z_ref_page_sub_type =Part%20Detail%20Page&WT.z_ref_page_id=0;;Other names;

Unit pack 3000

MOQ 3000

FET Features Logic Level Gate, 1.5V Drive

Package Tape & Reel (TR)

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 5A (Ta), 6A (Tc)

Vgs(th) (max) @ Id 1V @ 250µA

Drain to source voltage (Vdss) 12V

Standard package 3,000

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS 28 mOhm @ 5A, 4.5V

FET Type MOSFET P-Channel, Metal Oxide

Power - 1.7W max

Package/Enclosure TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) @ VDS 1275pF @ 6V

Gate Charge (Qg) @ VGS 35nC @ 8V

RoHS Directive Lead free / RoHS Compliant

Other namesSI2333DDS-T1-GE3CT

Transistor Polarity: P Channel

Continuous Drain Current Id :-6A

Drain Source Voltage Vds :-12V

On Resistance Rds(on):0.023ohm

Rds(on) Test Voltage Vgs :-4.5V

Threshold Voltage Vgs:400mV

Power consumption: 1.7W

Operating Temperature Min :-55°C

Operating Temperature Max :150°C

Transistor Case Style :SOT-23

No. of Pins :3

MSL :-

Operating temperature range: -55°C to +150°C

Weight (kg) 0.00012

Tariff No. 85412900