SI2309CDS-T1-GE3 VISHAY 60V 0.345Ohm MOSFET SOT-23

SI2309CDS-T1-GE3 product detailed specifications

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 60V

Current - Continuous Drain (Number) @ 25°C 1.6A

Rds (max) @ ID, VGS345 mOhm @ 1.25A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS4.1nC @ 4.5V

Input Capacitance (Ciss) @ 210pF of Vds @ 30V

Power - 1.7W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

channel type P

Channel Mode Enhancement

Maximum drain-source voltage 60 V

Maximum continuous drain current 1.2 A

RDS - at 345@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 40 ns

Typical rise time 35 ns

Typical turn-off delay time 15 ns

Typical fall time 10 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB3

Maximum power dissipation 1000

Maximum drain-source voltage 60

EU RoHS Directive Compliant

Maximum drain-source resistance 345@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 1.2

Package Tape and_Reel

Lead Shape Gull-wing

P(TOT) 1.7W

Match code SI2309CDS

Unit pack 3000

Standard lead time 17 weeks

MOQ 1

Polarized P-CHANNEL

Lead-free DefinRoHS-conform

I (D) 1.6A

V(DS) 60V

R (on DS) 0.345Ohm

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 1.2A (Ta), 1.6A (Tc)

Vgs(th) (max) @ Id3V @ 250µA

Drain to source voltage (Vdss) 60V

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS345 mOhm @ 1.25A, 10V

FET Type MOSFET P-Channel, Metal Oxide

Power - 1.7W max

Input Capacitor (Ciss) @ VDS210pF @ 30V

Gate Charge (Qg) @ VGS4.1nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2309CDS-T1-GE3CT

CategoryPower MOSFET

Configure Single

Dimensions 3.04 x 1.4 x 1.02mm

Height 1.02mm

Length 3.04mm

Maximum drain-source resistance 0.345 Ω

Maximum operating temperature +150 °C

Maximum power dissipation 1 W

Minimum operating temperature -55 °C

Package Type SOT-23, TO-236

Typical Gate Charge @ VGS2.7 nC V @ 4.5

Typical Input Capacitance @ VDS210 pF V @ 30

Width 1.4mm

Transistor Polarity: P Channel

Continuous Drain Current Id:-1.6A

Drain Source Voltage Vds:-60V

On Resistance Rds(on): 285mohm

Rds(on) Test Voltage Vgs:-10V

Threshold Voltage Vgs:-1V

Power consumption: 1.7W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:-

Current Id Max:-1.6A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max: 20V

Weight (kg)0.000008

Tariff No.85412900