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2022-09-24 22:18:33
KLM8G1GETF-B041 Chinese data PDF parameters Shenzhen Xindachuang Technology Co., Ltd.
KLM8G1GETF-B041 Original spot SAMSUNG Quantity: 11200 Lot: 18+ Package: FBGA Shenzhen Xindachuang Technology Co., Ltd. Mr. Ruan 13682328460 QQ960922153
KLM8G1GETF-B041 Features: VRTC included in STATIC12 (fixed 1.2-V) group.
TPS62353
? 88% efficiency, 3 MHz operation
? Output peak current up to 800 mA
? 3 MHz fixed frequency operation
?
first class
Load and Line Transients
?±2% PWM DC voltage accuracy
? Efficiency optimized power saving mode
?The H5TQ4G43AFR-XXC, H5TQ4G83AFR-XXC and H5TQ4G63AFR-XXC are
4GB
CMOS Double Data Rate III
(DDR3) Synchronous DRAM, ideal for applications requiring mass storage main memory
density and high bandwidth. 4GB DDR3 SDRAM chip provides full synchronous operation
ing and falling edge of the clock edge. while all address and control inputs are latched on the rising edge
On the CK (belonging to the edge of CK), the data, data strobe and write data mask inputs are sampled for two ripper
ing and dropping it to the brink. The datapath is internally pipelined and 8-bit prefetched to achieve very high
bandwidth.