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2022-09-24 22:18:33
Texas IRLML6401TRPBFMOSFET FET 12V Hot Selling Product Quality Assurance
TI Texas IRLML6401TRPBF MOSFET field effect tube 12V 4.3A SOT-23 advantage product large inventory original spot
IRLML6401TRPBF product detailed specifications
Height 1.02mm
Transistor material Si
Category Power MOSFET
Length 3.04mm
Typical Input Capacitance @Vds830pF@10V
Channel mode enhancements
Mounting Type Surface Mount
Number of components per chip 1
The maximum drain-source resistance value is 50mΩ
channel type P
BoardLevelComponentsY
Maximum operating temperature +150°C
Maximum gate threshold voltage 0.95V
Minimum operating temperature -55°C
Maximum power dissipation 1.3W
Maximum gate-source voltage ±8V
Width 1.4mm
Dimensions 3.04x1.4x1.02mm
Minimum gate threshold voltage 0.4V
Maximum drain-source voltage 12V
Typical turn-on delay time 11ns
Typical turn-off delay time 250ns
Package Type Miniature
Maximum continuous drain current 4.3A
Number of pins 3
Transistor Configuration Sheet
Typical gate charge @Vgs10nC@5V
Factory packing quantity 3000
Vds-Drain-SourceBreakdownVoltage-12V
Transistor Polarity P-Channel
RdsOn-Drain-SourceResistance50mOhms
Pd-PowerDissipation1.3W
BrandInfineonTechnologies
Id-ContinuousDrainCurrent-4.3A
Package Reel
Height 1.1mm
Installation style SMD/SMT
Length 2.9mm
Package/Enclosure SOT-23-3
Number of channels 1Channel
Qg-GateCharge10nC
Vgs-Gate-SourceVoltage8V
Transistor Type 1P-Channel