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2022-09-24 22:18:33
FQA10N80 own brand new original spot special sale MOSFET
Company; Shenzhen Fuxinle Electronic Technology Co., Ltd.
Tel; 0755-82789596
Mobile; 15919825718
Contact person; Miss Huang
Address; Room 202, Building 2, Huakang Building, Futian District, Shenzhen
manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
details
technology:
Si
Installation style:
Through Hole
Package/Case:
TO-3PN-3
Number of channels:
1 Channel
Transistor Polarity:
N-Channel
Vds-drain-source breakdown voltage:
800V
Id-Continuous Drain Current:
9.8A
Rds On-Drain Source On Resistance:
1.05 Ohms
Vgs - Gate-Source Voltage:
30V
Minimum operating temperature:
- 55C
Maximum operating temperature:
+ 150C
Pd-Power Dissipation:
240W
Configuration:
Single
Channel Mode:
Enhancement
Package:
Tube
high:
20.1 mm
length:
16.2 mm
Transistor Type:
1 N-Channel
type:
MOSFET
width:
5 mm
trademark:
ON Semiconductor / Fairchild
Forward Transconductance - Minimum:
10S
CNHTS:
8541290000
Fall time:
75ns
HTS code:
8541290095
product type:
MOSFET
Rise Time:
115ns
Factory Packing Quantity:
30
Subcategory:
MOSFETs
TARIC:
8541290000
Typical shutdown delay time:
125ns
Typical on-delay time:
45ns
Part number alias:
FQA10N80_NL
unit weight:
5.600 mg