IPD60R385CP ab...

  • 2022-09-24 22:18:33

IPD60R385CP absolutely brand new original spot MOSFET

Company; Shenzhen Fuxinle Electronic Technology Co., Ltd.

Tel; 0755-82789596

Mobile; 15919825718

Contact person; Miss Huang

Address; Room 202, Building 2, Huakang Building, Futian District, Shenzhen

manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

details

technology:

Si

Installation style:

SMD/SMT

Package/Case:

TO-252-3

Number of channels:

1 Channel

Transistor Polarity:

N-Channel

Vds-drain-source breakdown voltage:

600V

Id-Continuous Drain Current:

9 A

Rds On-Drain Source On Resistance:

350 mOhms

Vgs th - gate-source threshold voltage:

2.5V

Vgs - Gate-Source Voltage:

20V

Qg-gate charge:

22nC

Minimum operating temperature:

- 55C

Maximum operating temperature:

+ 150C

Pd-Power Dissipation:

83W

Configuration:

Single

Channel Mode:

Enhancement

Brand Name:

CoolMOS

Package:

Cut Tape

Package:

MouseReel

Package:

Reel

high:

2.3mm

length:

6.5mm

series:

CoolMOS CE

Transistor Type:

1 N-Channel

width:

6.22mm

trademark:

Infineon Technologies

CNHTS:

8541290000

Fall time:

5ns

HTS code:

8541290095

MXHTS:

85412999

product type:

MOSFET

Rise Time:

5ns

Factory Packing Quantity:

2500

Subcategory:

MOSFETs

TARIC:

8541290000

Typical shutdown delay time:

40ns

Typical on-delay time:

10ns

Part number alias:

IPD60R385CP SP000680638

unit weight:

4 g