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2022-09-24 22:18:33
BSC047N08NS3G new original special sale MOSFET
Company; Shenzhen Fuxinle Electronic Technology Co., Ltd.
Tel; 0755-82789596
Mobile; 15919825718
Contact person; Miss Huang
Address; Room 202, Building 2, Huakang Building, Futian District, Shenzhen
manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
details
technology:
Si
Installation style:
SMD/SMT
Package/Case:
TDSON-8
Number of channels:
1 Channel
Transistor Polarity:
N-Channel
Vds-drain-source breakdown voltage:
80V
Id-Continuous Drain Current:
100A
Rds On-Drain Source On Resistance:
3.9 mOhms
Vgs th - gate-source threshold voltage:
2V
Vgs - Gate-Source Voltage:
20V
Qg-gate charge:
69nC
Minimum operating temperature:
- 55C
Maximum operating temperature:
+ 150C
Pd-Power Dissipation:
125W
Configuration:
Single
Channel Mode:
Enhancement
Brand Name:
OptiMOS
Package:
Cut Tape
Package:
MouseReel
Package:
Reel
high:
1.27mm
length:
5.9mm
series:
OptiMOS 3
Transistor Type:
1 N-Channel
width:
5.15mm
trademark:
Infineon Technologies
Forward Transconductance - Minimum:
60S
CNHTS:
8541290000
Fall time:
11ns
HTS code:
8541290095
MXHTS:
85412999
product type:
MOSFET
Rise Time:
17ns
Factory Packing Quantity:
5000
Subcategory:
MOSFETs
TARIC:
8541290000
Typical shutdown delay time:
44ns
Typical on-delay time:
18ns
Part number alias:
BSC047N08NS3 BSC47N8NS3GXT G SP000436372
unit weight:
122.200 mg