BCP51 product detailed specifications

CategoryBipolar Power

Configure Single Dual Collector

Dimensions 1.7 x 6.7 x 3.7mm

Height 1.7mm

Length 6.7mm

Maximum collector base voltage 45 V

Maximum collector-emitter saturation voltage 0.5 V

Maximum Collector Emitter Voltage 45 V

Collector maximum DC current 1 A

Maximum base emitter voltage 5 V

Maximum operating frequency 145 MHz

Maximum operating temperature +150 °C

Maximum power dissipation 1 W

Minimum DC current gain 40 V

Minimum operating temperature -65 °C

Mounting Type Surface Mount

Number of components per chip 1

Package Type SC-73

Number of pins 4

Transistor type PNP

Width 3.7mm

Collector current (DC) (max) 1 A

Collector-Base Voltage 45 V

Collector-emitter voltage 45 V

Emitter-Base Voltage 5 V

Frequency (max) 145 MHz

Power dissipation 1 W

Install the Surface Mount

Operating temperature range -65C to 150C

Number of components 1

DC current gain (min) 63

Operating temperature classification Military

Arc hardeningNo

Transistor Polarity PNP

Frequency 145 MHz

DC current gain 63

Collector current (DC) 1 A

Collector Emitter Voltage V(br)ceo:80V

Transition Frequency ft: 145MHz

Power consumption: 650mW

DC Collector Current: 1A

DC Current Gain hFE:63

Operating Temperature Min:-65°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-223

No. of Pins: 3

MSL:-

SVHC: No SVHC (20-Jun-2013)

Av Current Ic: 1A

Collector Emitter Voltage Vces:-500mV

Continuous collector current Ic max: 1.5A

Current Gain Hfe Max: 250

Current Ic Continuous a Max: 1A

Current Ic hFE: 150mA

Gain Bandwidth ft Typ: 115MHz

Hfe Min: 63

No. of Transistors: 1

Operating temperature range: -65°C to +150°C

Power Dissipation Ptot Max:1.3W

SMD Marking: BCP51

Termination Type: SMD

Voltage Vcbo: 45V

Weight (kg)0.00012

Tariff No.85412100

associatedBCP51-16