SI2307CDS-T1-GE3 Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3

Standard package 3,000

FET Type MOSFET P-Channel, Metal Oxide

FET Features Standard

Drain-to-source voltage (VDSS) 30V

Current - Continuous Drain (No.) @ 25°C 3.5A

Rds (max) @ ID, VGS88 mOhm @ 3.5A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS6.2nC @ 4.5V

Input Capacitor (Ciss) @ 340pF of Vds @ 15V

Power - 1.8W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

channel type P

Channel Mode Enhancement

Maximum drain-source voltage 30 V

Maximum continuous drain current 2.7 A

RDS - at 88@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 40 ns

Typical turn-off delay time 20 ns

Typical fall time 17 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB3

Maximum Power Dissipation 1100

Maximum drain-source voltage 30

EU RoHS Directive Compliant

Maximum drain-source resistance 88@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 2.7

Package Tape and_Reel

Lead Shape Gull-wing

P(TOT) 1.8W

Match code SI2307CDS

Unit pack 3000

Standard lead time 15 weeks

MOQ 3000

Polarized P-CHANNEL

Lead-free DefinRoHS-conform

carNO

I (D) 2.7A

V(DS) 30V

R (on DS) 0.088Ohm

FET Features Standard

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 3.5A (Tc)

Vgs(th) (max) @ Id3V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS88 mOhm @ 3.5A, 10V

FET Type MOSFET P-Channel, Metal Oxide

Power - 1.8W max

Drain to source voltage (Vdss) 30V

Input Capacitor (Ciss) @ VDS340pF @ 15V

Gate Charge (Qg) @ VGS6.2nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2307CDS-T1-GE3CT

Drain current (max) 2.7 A

Frequency (Max) Not Required MHz

Gate-source voltage (max)? 20 V

Output power (max) Not Required W

Power dissipation 1.1 W

Noise Figure Not Required dB

Drain-source on-resistance 0.088 ohm

Operating temperature range -55C to 150C

Packaging Type SOT-23

Polarity P

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 30 V

Power Gain Not Required dB

Arc hardeningNo

Continuous drain current 2.7 A

Remove Compliant

Transistor Polarity: P Channel

Continuous Drain Current Id:-2.7A

Drain Source Voltage Vds:-30V

On Resistance Rds(on): 138mohm

Rds(on) Test Voltage Vgs: 20V

Threshold Voltage Vgs:-3V

Weight (kg)0

Tariff No.85412900

Power consumption: 1.1W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:-

Current Id Max:-3.5A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max: 20V