SI2308BDS-T1-GE3 vishay MOSFET N-CH 60V 1.9A 3-Pin SOT-23

SI2308BDS-T1-GE3 product detailed specifications

RohsLead free / RoHS Compliant

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 60V

Current - Continuous Drain (No.) @ 25°C 2.3A

Rds (max) @ ID, VGS156 mOhm @ 1.9A, 10V

VGS (TH) (max) @ Id3V @ 250µA

Gate Charge (Qg) @ VGS6.8nC @ 10V

Input Capacitor (Ciss) @ 190pF of Vds @ 30V

Power - 1.66W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 60 V

Maximum continuous drain current 1.9 A

RDS - at 156@10V mOhm

Maximum gate-source voltage ±20 V

Typical turn-on delay time 15 ns

Typical rise time 16 ns

Typical turn-off delay time 11 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±20

Packing width 1.4(Max)

PCB3

Maximum Power Dissipation 1090

Maximum drain-source voltage 60

EU RoHS Directive Compliant

Maximum drain-source resistance 156@10V

Number of components per chip 1

Minimum operating temperature -55

Supplier Package SOT-23

Standard package name SOT-23

Maximum working temperature 150

Channel TypeN

Packing length 3.04(Max)

Number of pins 3

Packaging height 1.02(Max)

Maximum continuous drain current 1.9

Package Tape and_Reel

Lead Shape Gull-wing

FET FeaturesLogic Level Gate

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 2.3A (Tc)

Vgs(th) (max) @ Id3V @ 250µA

Drain to source voltage (Vdss) 60V

Supplier Equipment Package SOT-23-3 (TO-236)

On-state Rds (max) @ Id, V GS156 mOhm @ 1.9A, 10V

FET Type MOSFET N-Channel, Metal Oxide

Power - 1.66W max

Input Capacitor (Ciss) @ VDS190pF @ 30V

Gate Charge (Qg) @ VGS6.8nC @ 10V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

Other namesSI2308BDS-T1-GE3CT

CategoryPower MOSFET

Configure Single

Dimensions 3.04 x 1.4 x 1.02mm

Height 1.02mm

Length 3.04mm

Maximum drain-source resistance 0.156 Ω

Maximum operating temperature +150 °C

Maximum power dissipation 1.09 W

Minimum operating temperature -55 °C

Packaging Type SOT-23

Typical Gate Charge @ VGS2.3 nC V @ 4.5, 4.5 nC V @ 10

Typical Input Capacitance @ VDS190 pF V @ 30

Width 1.4mm

Factory packing quantity 3000

Product TypeMOSFET

Transistor Polarity N-Channel

Source breakdown voltage +/- 20 V

Continuous drain current 1.9 A

Installation style SMD/SMT

RDS(ON) 156 mOhms

Power dissipation 1.09 W

Package/Enclosure SOT-23-3

Part number alias SI2308BDS-GE3

Rise time 16 ns

Drain-source breakdown voltage 60 V

RoHSRoHS Compliant

Fall Time 16 ns

Drain current (max) 1.9 A

Frequency (Max) Not Required MHz

Gate-source voltage (max)? 20 V

Output power (max) Not Required W

Noise Figure Not Required dB

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 60 V

Power Gain Not Required dB

Arc hardeningNo

Remove Compliant

Continuous Drain Current Id: 2.3A

Drain Source Voltage Vds: 60V

On Resistance Rds(on): 192mohm

Rds(on) Test Voltage Vgs: 20V

Threshold Voltage Vgs: 3V

Weight (kg)0

Tariff No.85412900

Power consumption: 1.09W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:MSL 1 - Unlimited

Current Id Max: 1.9A

Operating temperature range: -55°C to +150°C

Voltage Vgs Max: 20V