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IPD26N06S2L-35 Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

Installation style: SMD/SMT

Package/Case: TO-252-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 55 V

Id-Continuous Drain Current: 30 A

Rds On-Drain Source On Resistance: 27 mOhms

Vgs th-gate-source threshold voltage: 1.2 V

Vgs - Gate-Source Voltage: 20 V

Qg-gate charge: 24 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Configuration: Single

Pd-Power Dissipation: 68 W

Channel Mode: Enhancement

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 2.3 mm

Length: 6.5 mm

Transistor Type: 1 N-Channel

Width: 6.22 mm

Trademark: Infineon Technologies

CNHTS: 8541290000

Fall Time: 11 ns

HTS Code: 8541290095

MXHTS: 85412999

Product Type: MOSFET

Rise Time: 18 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

TARIC: 8541290000

Typical turn-off delay time: 26 ns

Typical turn-on delay time: 5 ns

Part number alias: IPD26N06S2L35ATMA1 SP000252165

Unit weight: 4 g