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IPG20N06S4L-26 Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

Installation style: SMD/SMT

Package/Case: TDSON-8

Number of channels: 2 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 60 V

Id-Continuous Drain Current: 20 A

Rds On-Drain Source On Resistance: 21 mOhms, 21 mOhms

Vgs th-gate-source threshold voltage: 1.2 V

Vgs - Gate-Source Voltage: 16 V

Qg-gate charge: 20 nC, 20 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Configuration: Dual

Pd-Power Dissipation: 33 W

Channel Mode: Enhancement

Qualification: AEC-Q101

Brand Name: OptiMOS

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.27 mm

Length: 5.9 mm

Series: OptiMOS-T2

Transistor Type: 2 N-Channel

Width: 5.15 mm

Trademark: Infineon Technologies

CNHTS: 8541210000

Fall Time: 10 ns, 10 ns

HTS Code: 8541290095

MXHTS: 85423901

Product Type: MOSFET

Rise Time: 1.5 ns, 1.5 ns

Factory Packing Quantity: 5000

Subcategory: MOSFETs

TARIC: 8542399000

Typical turn-off delay time: 18 ns, 18 ns

Typical turn-on delay time: 5 ns, 5 ns

Part number alias: IPG20N06S4L26ATMA1 IPG2N6S4L26XT SP000705588