MDC5000T1-Silic...

  • 2022-09-24 22:26:30

MDC5000T1-Silicon Integrated Circuit SMALLBLOCK

• Maintains bias current effect transistors in all types of discrete bipolar and field stable • Provides radiant source stable bias without ballast use • Uses single components and bypass elements • Operating voltage is 1.8 volts over a wide supply voltage Range • Reduced bias current variation due to temperature and unit-to-unit parameter variation • Occupied? 0.5 mW at VCC = 2.75 V

The device provides a reference voltage as a DC feedback element and behaves around an external discrete, NPN transistor or N-channel FET. It allows an external transistor to have its emitter/source, directly grounded, and still have a steady collector/drain DC current. This is primarily intended to stabilize discrete RF bias operating stages from low voltage regulated power supplies, but can also be used to stabilize bias currents at any linear stage to eliminate emitter/source bypassing and achieve more stringent temperature bias and Supervision of the unit. This device is designed to replace three discrete component circuits to six and is available in a SOT-143 package.

The combination of low supply voltage, low quiescent current consumption, and small package make it ideal for portable communications applications such as:
• Cellular Phones • Pagers • PCN's/PCS Portable Computers • PCMCIA RF Modems • Cordless Phones • Broadband Wireless Transceivers and Other Portable Products