Radiation Hardened High Frequency Half-Bridge Driver The radiation-hardened IS-2100ARH is a high frequency, 130V half-bridge N-channel MOSFET driver IC, which is functionally similar to the industry standard 2110 species. The lowside high-side gate drivers can be independently controlled. This gives the user maximum flexibility in choosing and driver protocol at the time of death. In addition, the device features on-chip error detection and correction circuitry that monitors the status of the high-side latch and compares its display signal. If they do not agree, a SET or RESET pulse generates the correct high-side latch. This feature protects high-end single event locking upsets (Theseus).

Features • Electrical screening to DSCC patch #5962-99536
• QML-qualified per MIL-PRF-38535 requirements • Radiated environment
- Maximum total dose ............. 300krad (four)
- Two gymnastics processes provide atresia immunity
-Southeast University grade ................................82MeV/mg/cm2
- Vertical device architecture reduces sensitivity for low dose rates Bootstrap power supply maximum voltage to 150V
• Drive a 1000pF load with a 1MHz rise and fall time of 30ns (typ)
• 1.5A (typ) peak output current • Non-independent input half-bridge topology • Low DC power consumption. . . . . . . . . . . . . 60mW (typ)
• Operates with VDD = VCC over the 12V to 20V range • Low-side power supply undervoltage protection

Applications • High Frequency Switch Mode Power Supplies • Drivers for Inductive Loads • DC Motor Drivers