Radiation Hardened Dual Channel, Inverting Power MOSFET Drivers The radiation hardened Hs4423RH and HS, 4423BRH are inverting, dual channel, monolithic high speed MOSFET drivers designed to convert high current to TTL level signals at voltages up to 18V at the output. The inputs for these devices are TTL compatible and can be driven directly by our HS, 1825ARH PWM or our CASI/AQ and HCS/HCTS-type logic devices. The fast rise time and high current output allow very fast control of gate capacitance of high power MOSFETs, like our radiation hardened FS055, in high frequency applications. High current output reduces power loss through fast MOSFET gate charge and discharge capacitors. The output stage uses a low-voltage lockout circuit that puts the output into a tri-state mode when the supply voltage drops below 10V for the HS, 4423RH and 7.5V for the HS, 4423BRH. With Intersil's Artificial Dielectric Isolation Radiation Hardened Silicon Gate (Gym) BiCMOS process, these devices are immune to single-event latch-up and have been designed to provide highly reliable performance in harsh radiation environments.

Features • Electrical screening to reverse patch #5962-99511
• QML-qualified per MIL-PRF-38535 requirements • Radiation environment
- Total Dose (Max) ........ 0.3 x 105 RAD (D)
- Atresia immunity
- Low dose rate immunity • Peak current: I.............. (A (Typical)
• Matched rise and fall times (Cl = 4300pF..............75ns (max)
• Low voltage lockout function
- Hang Seng - 4423RH..............<10.0V
- Hang Seng-4423BRH..............<7.5V•Wide supply voltage range.......12V to 18V•Pillar delay.. ............ 250 saline (max)
• Consistent delay time with VCC variation • Low power consumption
- with high 40mW power input
- 20mW with low input power
• Low Equivalent Input Capacitance ................. 3.2 pF (typ)
• ESD Protection ...... 0.4000 V

Applications • Switching Power Supplies • DC/DC Converters • Motor Controllers