The LT®1160/LT1162 are cost-effective half-/full-bridge N-channel power MOSFET drivers described. The driver can float the upper drive N-channel power MOSFET off the high voltage (HV) rail up to 60V. Internal logic prevents turning the input in the half-bridge power MOSFET at the same time. Its unique adaptive protection against shoot-through current eliminates all of the MOSFETs in the two matching requirements. This greatly simplifies designing high-efficiency motor control and switching regulator systems. During low power or start-up conditions, the undervoltage positive pull-locks the driver output to prevent the low power MOSFET from being partially turned on. The 0.5V hysteresis allows reliable operation even with slow changing supplies. The LT1162 is a dual-channel version of the LT1160, currently available in a 24-pin PDIP or 24-pin SO package width.

Features Floating Top Drives Up to 60V Switching Gate Top Drives N-Channel MOSFETs Above High-Voltage Supply Loads
180ns transition time drive 10,000 pF adaptive non-overlapping gate drive prevention shoot-through top drive protection at high duty cycles TTL/CMOS input level undervoltage lockout with hysteresis at supply voltages from 10V to 15V operation n
Independent top and bottom drive pins

Applied PWM High Current Inductive Loads Half-Bridge and Full-Bridge Motor Control Synchronous Buck Switching Regulators Three-Phase Brushless Motor Drivers High Drive Current Sensors
Class D power amplifier