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2022-09-24 23:18:44
IR51H224-Self-excited half bridge
Features · Output power MOSFET in half-bridge configuration · High-side gate driver bootstrap operation design · Bootstrap diode integrated package (HD type)
Accurate timing control of two power MOSFET matching delays to obtain a 50% duty cycle matching dead zone of 1.2us
· Internal oscillator with programmable frequency · 15.6V Zener clamped VCC for offline operation, half-bridge output is eliminated with RT · Micropower startup
DESCRIPTION The IR51H(D)XXX is a complete high voltage, high speed, selfoscillating half-bridge circuit. Proprietary HVIC and latch-immune CMOS technology, along with HEXFET® power MOSFET technology, enables single-package ruggedized construction. The front end features a programmable oscillator similar to the CMOS555 timer. A Zener clamp circuit to control the power supply simplifies offline operation. The output features two HEXFETs in a half-bridge configuration with an internal dead-time design for lowest transconductance in the half-bridge. For high-end and low-end propagation delays...