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2022-09-24 23:23:06
IR21834-Half-bridge driver
Described in the IR2183(4)(S) are high-voltage, high-speed power MOSFETs and IGBTs with driver-related high- and low-side reference output channels. Proprietary HVIC and latch-immune rugged CMOS technology enable monolithic construction. This logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver has a high pulse current buffer stage with minimum driver transconductance. The floating channel can be used to drive an N-channel power MOSFET or IGBT in a high-side configuration which can operate at up to 600 volts.
Features • Floating channel designed for bootstrap operation +600 V full operation Immunity to transients with negative dV/dt • Gate drive voltage range from 10 to 20V
• Undervoltage lockout on both channels • 3.3V and 5V input logic compatible • Matched propagation delay on both channels • Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity • Output source/sink current capability 1.4A/1.8A
• Also available lead-free (PBF)