The HIP1020 is suitable for any combination of MOSFETs with a linear ramp voltage gate of 3.3V, 5V and 12V. The internal charge pump doubles the 12V bias or triples the 5V bias to provide customers with high-side driver capability when more cost-effective N-channel MOSFETs are required. 5V/ms ramps the internal control rate and turns on is the correct value for the di/dt limit specified by most devices in the device bay. If a slower rate is required, the internally determined ramp rate can be overridden using an optional external capacitor. When VCC = 12V, the charge pump ramps the voltage from zero to 22V HGATE about 4ms. This enables either standard or logic level MOSFETs to be fully enhanced when the high-side switch is used for 12V supply control. "The LGATE ramp from zero to 16V enables synchronous control of 3.3V and/or 5V MOSFETs. When VCC = 5V, the input voltage of the charge pump is tripled mode. The voltage on the HGATE ramp goes from zero to 12.5V while LGATE Ramp 12.0V for about 3ms. This mode is ideal for controlling high-side MOSFET switches at 3.3V and 5V power switches when 12V bias is not available.

Features • Rise time control device bay specification • No additional components required • Internal charge pump drives N-channel MOSFET
• Drive any combination of one, two or three outputs.
• Internally controlled turn-on ramp - optional capacitor selection for slower speeds • Prevents spurious turn-on during hot insertion • Uses 12V or 5V biasing • Improves device bay cost and complexity
- Minimum number of components
- Tiny 5-pin SOT23 package • Controls standard and logic level MOSFETs
• Compatible with TTL and 3.3V logic devices • Shutdown current.......<1µA
• Operating Current ............ <3mA

Applications • Device Bay Peripherals • Popular Plug-In Controls • Power Distribution Control