Features

The voltage of the working power supply is 8 to 52 V

5.6 A output peak current (2.8 a dc)

RDS (open) 0.3 #61527; typical typical; value. TJ value 25 degrees Celsius

The operating frequency is as high as 100 kHz

The programmable high -voltage side over current detection and protection

Diagnostic output

Paid operation

Cross -conduction protection

Hot shutdown

Impurd pressure lock

Integrated rapid and free rotation diode

Application

Double pole steps Enter the motor

Double or four DC motors

Instructions

L6206 The device is DMOS dual -full bridge as a motor control application design. It is realized in CMOS in BCD technology The bipolar DMOS power transistor circuit is on the same chip. Provided in PowerDIP24 (20+2+2), POWERSO36 and SO24 (20+2+2) packages, L6206 equipment feature heat shutdown and non -dissipated high -voltage -side power over current detection MOSFET plus diagnostic output is easy to achieve over -current protection.

1. Installed on a multi -layer FR4 PCB, the surface of the cooling copper at the bottom is 6 cm2 (thickness of 35 μm).

2. Installed on a multi -layer FR4 PCB, the surface of the cooling copper on the top is 6 cm2 (thickness of 35 μm).

3. Installed on a multi -layer FR4 PCB, the surface of the heat dissipation copper on the top is 6 cm2 (thickness of 35 μm), 16 pass holes and a bottom layer.

4. Installed on a multi -layer FR4 PCB, there is no heat sink on the board.

Electricity

Table 5. Electrical characteristics (unless there are other regulations, the ambient temperature 25 ° C, vs 48 V)

Table 5. Electrical characteristics (ambient temperature 25 ° C, vs 48 V, unless there are other regulations)

1. Test in the limit range of 25 ° C And pass feature verification.

2. See Figure 3: Switch feature definition.

3. See Figure 4: Definition when current is detected.

Circuit description

Power level and charging pump

L6206 device integrates two independent power MOS full bridges. EveryPower MOS has RDS (ON) 0.3 #61527; (a typical value at 25 ° C), and has an inherent rapidly continuing diode. Cross -string uses a dead area (TD 1 μs, typical value) between the switch shutdown to achieve conduction and protection of two power MOS on a bridge arm. The use of the N -channel power MOS as the transistor on the bridge requires the grid drive voltage higher than the power supply voltage. Getting the guidance (VBOOT) power to achieve the charge pump circuit through one internal oscillator and several external components as shown in Figure 5. The oscillator output (VCP) is a square wave 10 V amplitude of 600 kHz (typical). The recommendation value of the charging pump circuit/part number is in Table 6

logical input

pins In1a, IN2A, IN2B, ENA and ENA, and ENB is a logical input compatible with TTL/CMOS. This internal structure is shown in Figure 6. The typical value of the opening and closing threshold is VTH (open) 1.8 V, VTH (off) 1.3 V. ENA and ENB are usually used to achieve over -current and thermal protection that connect them to OCDA and OCDB, respectively. These two outputs are the output of leakage. If you choose this connection method, you need to be careful when you drive these connections. Figure 7 and 8 show two configurations. If it is driven by the bright channel, the pull -up resistor REN and the capacitor CEN are connected as shown in Figure 7. If the driver is a standard push -pull structure, the connection between the resistor REN and the capacitor CEN is shown in Figure 8. The resistance REN should choose to from 2.2 k #61527; to 180 k #61527; The recommended values of Ren and CEN are 100 k #61527; and 5.6 nf, respectively. For more information about the selection value, see Section 5.3: non -dissipated over -current detection and protection.

No consumed over current detection and protection

In addition to PWM current control, over -current detection is also integrated Circuit (OCD). The circuit can be used to provide a rough adjustment of the two -phase phase of the protection bridge to the ground or the short -circuit of the ground. Using this internal current detection, the external current detection resistor and it are usually used to eliminate relevant power consumption. Figure 9 shows the over -current detection circuit of Bridge A. Bridge B has an analog circuit. In order to achieve over -current detection, a sensor element provides a small and precise each high -edge power MOS to achieve part of the output current. Since then, the current is a small part of the output current, and there is almost no extra power dissipation. This current is compared with the internal reference current Iref. When the OCD comparator sends a fault signal, the output current reaches the detection threshold condition. When the failure is detected, the internal leakage MOS has a drop -down 4 mAh capacity that is connected to the OCD pin. Figure 10 shows OCD exercisesdo. This signal can be used to adjust the output current, and only needs to connect the OCD pin to shown in Figure 9. The normal operation before the restoration can be input through logical input. Therefore, the output threshold can be selected through the current detection and Iref, according to the following equations:

display the output current protection threshold and 5 k

#61527; [ [ 123]. The RCL value within the range to 40 k #61527; . . The method of disable time T before restoring normal operations can pass the accurate threshold of logic input. Whether the value of Cen and Ren and its size are shown in Figure 12. When the delay time T is detected, the bridge depends only on the CEN value when the current is detected. It is shown in Figure 13. CEN can also be used to provide anti -fast transient noise resistance to the pin EN. Therefore, the CEN value should be selected according to the maximum accommodation value as much as possible and the ren value should be selected according to the required disable time. The resistor REN should be selected in the range of 2.2 k #61527; to 180 k #61527;. The values of Ren and CEN are recommended for 100 k #61527; and 5.6 nf, which allows 200 μs to disable time.

Heat protection

In addition to over -current detection, L6206 device is also integrated The heat protection device is prevented when the knot temperature is too high. It can sense the mold temperature through the sensitive element integrated in the mold. When the knot temperature reaches 165 ° C (typical. The lag value (typical value is 15 ° C). Value)

Application information

The typical application of L6206 device is shown in Figure 14. The value of the typical component application is shown in Table 8. High -quality ceramic capacitors shall be placed between the Power Source (VSA and VSB) and the nearby ground. The 100 to 200 NFL6206 device will improve the impact of high -frequency filtering on the power supply and reduce the high -frequency transients generated by the interference switch of the power supply. The capacitor sets the bridge connection A from ENA/OCDA and ENB/OCDB nodes, and when the current is detected, the bridge B (see Section 5.3: Page 13 of non -scattered over current detection and protection). The two current sources (Sensea and Sensor B) shall be connected to the power ground, and the length of the trace line should be as short as possible. In order to improve the resistance, the unused logical tube foot is best connected to 5 V (high logic level) or GND (low logic level) (see page 6 Table 4: pin explanation). It is recommended to keep the power grounding and signal grounding on PCB.

Paid operation

The output of the L6206 device can be connected in parallel to improve the output current capacity or reduce the power consumption of the equipment at a given current level. It must be pointed out, but the internal wire connection must be carried by the two -related semi -bridge from the mold to the power supply or sensing tube foot component. When two halves of a full bridge (such as OUT1A and OUT2A) are connected in parallel, the peak current rated value does not increase, because the total current must still flow through a connected wire power supply or inductive tube foot. In addition, overcurrent detection also detects the current in each bridge (A or B), so the two -half parallel bridge connecting a bridge will not increase the current detection threshold. For most applications, the recommended configuration is the half -bridge 1 of Bridge A. For the half bridge 1 of Bridge B, the same is true for Half Bridge 2, as shown in the middle of the middle. The current in the two devices of parallel will be well shared, because the RDS (on) of the device on the same chip match well. When the current detection circuit is connected in this configuration, the current in each bridge (A and B) of the circuit detection will be sensing to the independent parallel connection, and the detection circuit with the lowest threshold will first trip. The connection with the enlightenment is tested for the first time. The over -current device in the upper DMO will turn both bridges. Assuming that the two DMOS devices sharing current, the generated over current detection threshold will be twice the minimum threshold set by the resistance RCLA or RCLB settings in Figure 15. It is recommended to use RCLA RCLB. In this configuration, the generated net bridge has the following characteristics:

Equivalence device: full bridge

RDS (open) 0.15 #61527; typical values. The value of TJ 25 ° C

5.6 A maximum square root load current

maximum OCD threshold 11.2 a

can also be possible The four semi -bridge are parallel to obtain a simple half bridge, as shown in Figure 17. In this configuration, the threshold of the overcire threshold is twice the minimum value of the minimum value. It is recommended to use RCLA RCLB. The resulting half bridge has the following characteristics:

Equivalent device: Half Bridge

RDS (Kai) 0.075. #61527; typical value. The value of TJ 25 ° C

5.6 A maximum square root load current

maximum OCD threshold 11.2 a

output current Power and integrated circuit power consumption

FIG. 18 and 19 show the approximation relationship between the output current and the IC power consumption uses PWM current control to drive two loads. For two different load driving types: [123 ]

Open a complete bridge at a time (Figure 18), only one load is powered on at a time.

Two full bridges are opened at the same time (Figure 19), two of which are loaded at the same timeEssence

For a given output current and driving type, the integrated circuit can easily consume power assessment to determine which package should be used and the large and small copper heat sink areas that should be used to ensure a safe work temperature for work knot temperature(Up to 125 ° C).