DRV8701PRGER

  • 2022-09-23 17:22:28

DRV8701PRGER

Features of DRV8701

Single H-Bridge Gate Driver

Drives 4 External N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Supports 100%_Pulse Width Modulation (PWM) duty cycle

5.9V to 45V Operating Supply Voltage Range

Two control interface options

PH/EN (DRV8701E)

PWM (DRV8701P)

Adjustable gate drive (5 levels)

6mA to 150mA Source Current

12.5mA to 300mA Sink Current

Supports 1.8V, 3.3V and 5V logic inputs

Shunt Amplifier (20V/V)

Integrated PWM current regulation

Limit motor inrush current

Low power sleep mode (9μA)

Two low dropout (LDO) regulators for powering external components

AVDD: 4.8V, supports up to 30mA output load

DVDD: 3.3V, up to 30mA output load

Small package size

24-Pin Ultra Low Profile Quad Flat No-Lead (VQFN) (PowerPAD)

4.0mm × 4.0mm × 0.9mm

Protection Features:

VM Undervoltage Lockout (UVLO)

Charge Pump Voltage (CPUV)

Over Current Protection (OCP)

Front Drive Failure (PDF)

Thermal Shutdown (TSD)

Fault Status Output (nFAULT)

application

Industrial Brushed DC Motors

robot

home automation

Industrial Pumps and Valves

electrical tools

Handheld Vacuum Cleaner

Description of DRV8701

The DRV8701 is a single H-bridge gate driver with 4 external N-channel MOSFETs, designed to drive 12V to 24V bidirectional brushed DC motors.

The device easily interfaces with controller circuits via PH/EN (DRV8701E) or PWM (DRV8701P) interfaces. A built-in sense amplifier enables adjustable current control. The gate driver has built-in circuitry to adjust the winding current with fixed off-time PWM current chopping.

The DRV8701 uses a 9.5V VGS gate drive voltage to drive the high-side and low-side FETs. The gate drive current for all external FETs is configurable through a single external resistor on the IDRIVE pin.

A low-power sleep mode shuts down internal circuits, resulting in very low quiescent current consumption. This sleep mode can be programmed by driving the nSLEEP pin low.

The following protections are built into the device: undervoltage lockout, charge pump fault, overcurrent shutdown, short-circuit protection, pre-driver fault, and thermal protection. Fault conditions are indicated by the nFAULT pin.