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2022-09-23 17:22:28
IRFB3206PBF
Type description choice?
Category Discrete Semiconductors Transistor - FET, MOSFET - Single
ManufacturerInfineon Technologies
Series HEXFET?
Packaging Pipe Fittings
Product status on sale
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) at different Id, Vgs 3 milliohms @ 75A, 10V
Vgs(th) (max) at different Id 4V @ 150μA
Gate charge at different Vgs? (Qg) (max) 170 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) (Max) at Vds 6540 pF @ 50 V
FET function-
Power Dissipation (Maximum) 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package/Case TO-220-3
Base Product Number IRFB3206