2N7002ET1G

  • 2022-09-23 17:22:28

2N7002ET1G

Manufacturer: onsemi

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/ Box: SOT-23-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 60 V

Id-Continuous Drain Current: 310 mA

Rds On-Drain Source On Resistance: 2.5 Ohms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 1 V

Qg-gate charge: 810 pC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 420 mW

Channel Mode:Enhancement

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: onsemi

Configuration:Single

Fall Time: 3.6 ns

Forward Transconductance - Minimum: 530 mS

Height: 0.94 mm

Length: 2.9 mm

Product: MOSFET Small Signal

Product Type:MOSFET

Rise time: 1.2 ns

Series: 2N7002E

30000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 4.8 ns

Typical turn-on delay time: 1.7 ns

Width: 1.3 mm

Unit weight: 8 mg