The first generation of semiconductor materials mainly refers to semiconductor materials such as silicon (Si) and germanium (Ge). Xingyujia Technology), and is widely used in consumer electronics, communications, photovoltaics, military and aerospace and other fields.

The second-generation semiconductor materials are compound semiconductors based on gallium arsenide (GaAs) and indium antimonide (InSb), which are mainly used to make high-frequency, high-speed and high-power electronic devices. And optical communication and other fields have a wider range of applications.

?? The third-generation semiconductor materials include wide bandgap compound semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN). Compared with the first and second generation semiconductor materials, the third generation semiconductor materials have obvious advantages in high temperature resistance, high voltage resistance, high frequency operation, and high current resistance (Xingyujia Technology), so it is more It is suitable for making high-temperature, high-frequency, anti-radiation and high-power devices, and has more obvious application advantages in power electronic devices, microwave radio frequency and other fields.

?? GaN, as the representative of the third-generation semiconductor material, has obvious technical advantages in power management and power output. At around 650 volts, it is significantly better than silicon in terms of chip area, circuit efficiency and switching frequency, making power products thinner and more efficient. And GaN chargers are small in size, high in efficiency and low in heat generation, and are expected to unify the fast-charging charger market in the future (Xingyujia Technology). bright future.

??At the same time, the state has provided continuous policy support for the development of the third-generation semiconductor industry. In 2016, the State Council issued the "Notice of the State Council on Printing and Distributing the "Thirteenth Five-Year" National Science and Technology Innovation Plan", which first mentioned the need to speed up Research and development of third-generation semiconductor chip technology and devices (Xingyujia Technology); in June 2019, the Ministry of Commerce and the National Development and Reform Commission added support for the introduction of SiC ultrafine powder foreign enterprises in the list of encouraged foreign investment; in November 2019, the Ministry of Industry and Information Technology issued " The First Batch of Application Demonstration Guidance Catalog for Key New Materials, in which third-generation semiconductor products such as GaN single crystal substrates, GaN epitaxial wafers for power devices, SiC epitaxial wafers, and SiC single crystal substrates are included in the catalog; The "Yangtze River Delta Region-Integrated Development Plan" clearly calls for accelerating the cultivation and layout of the third-generation semiconductor industry and promoting the high-quality development of the third-generation semiconductor industry.

In this context, Times Express has formed a product layout with GaN-on-SiC and GaN-on-Si as the core, and successfully launched SiC-GaN radio frequency chips and Si-GaN power electronic power devices, promoting GaN market development.

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