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2022-09-23 17:22:28
SI7120ADN-T1-GE3 MOSFET N-CH 60V9A field effect tube high current bottom internal resistance
Manufacturer: Vishay
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: PowerPAK-1212-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 60 V
Id-Continuous Drain Current: 9.5 A
Rds On-drain-source on-resistance: 21 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1.5 V
Qg-gate charge: 30 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 3.8 W
Channel Mode:Enhancement
Brand Name: TrenchFET
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Vishay Semiconductors
Configuration:Single
Fall Time: 12 ns
Forward Transconductance - Min: 35 S
Height: 1.04 mm
Length: 3.3 mm
Product Type:MOSFET
Rise time: 12 ns
Series:SI7
3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 50 ns
Typical turn-on delay time: 14 ns
Width: 3.3 mm
Unit weight: 1 g