TAJE156M050RNJ_TAJE156M050RNJ Introduction

However, when connecting directly from NMOS to CMOS, since the high level of the NMOS output is lower than the input high level of the CMOS integrated circuit, a (potential) pull-up resistor R needs to be used, and the value of R is generally 2 to 100KΩ. As long as the CMOS integrated circuit uses the same power supply as the NMOS integrated circuit, it can be directly connected to the NMOS integrated circuit. Most NMOS integrated circuits are powered by a single group of positive power supplies, and most of them are 5V.

TAJE156M050RNJ_TAJE156M050RNJ

TAJA155K016RNJ

060310R5%_060312K5%_060315K1%_060315K5%_0603180K5%_.

TAJA225M010RNJ TAJA225M016RNJ TAJA225M020RNJ TAJA225M025RNJ TAJA225M035RNJ TAJA226K004RNJ TAJA226K006RNJ TAJA226K010RNJ TAJA226M004RNJ TAJA226M006RNJ .

But there are parasitic diodes between the D pole and the substrate. If it is a single transistor, the substrate is of course connected to the S pole, so there is naturally a diode between the DS. So what does the parasitic diode do? When a large instantaneous reverse current is generated in the circuit, it can be derived through this diode, so as not to break down the MOS tube. (plays the role of protecting the MOS tube). The analog circuit book talks about the structure of low-power MOS tubes, so there is no such diode. If in the IC, the N-MOS substrate is connected to the lowest voltage, and the P-MOS substrate is connected to the highest voltage, which is not necessarily connected to the S pole, so there is not necessarily a parasitic diode between DS.

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

TAJE156M050RNJ_TAJE156M050RNJ

TAJC156M016RNJ

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

BYP32028 BYS32010 BYJ32027A BYH326 BYH323.

TAJE156M050RNJ_TAJE156M050RNJ

In general, the advantage of MOSFET is that it has good high-frequency characteristics, and the operating frequency can reach hundreds of kHz and up to MHz. The disadvantage is that the on-resistance is large in high-voltage and high-current applications, and the power consumption is large; while IGBT is in low-frequency and high-power applications. It has excellent performance under low on-resistance and high withstand voltage.

relevant information