LM9061 has non -de...

  • 2022-09-16 16:00:09

LM9061 has non -destructive protection power MOSFET drive

General description

LM9061 is a charge pump device that provides an external power MOSFET configuration of the door drive to any size as a driver or switch on the high -voltage side. CMOS logic compatible circuit is turned on/off the input control output gate driver voltage. In the ON state, the charge pump voltage is far higher than the available VCC power supply, which is directly applied to MOSFET. The source voltage of the built -in 15V Zina's largest door MOSFET. When the command is turned off, the 110 μA current receiver's gradient off the MOSFET to minimize the duration of the induction load transient voltage to protect the power MOSFET. The non -destructive protection of the power MOSFET is LM9061. Continuous monitoring through the voltage drop (VDS) of the power supply equipment and compare with the external programming threshold voltage. Small current resistance resistance is connected in series with the load, resulting in loss of energy protection circuits without available energy. If the VDS voltage is too large, exceeding the threshold voltage, the output in a more gradual way (through the 10 μA output current remittance) can be programmed by programmable delay time interval. The working temperature range for the application environment of the car application environment is wide 40 ; C to+125 ; LM9061 can be used for packaging and packaging for 8 stitches.

Features

Built -in charge pump, used for high -voltage side grille excess drive

Drive application

The non -destructive protection of power mosFet

] Programmable MOSFET protection voltage

Protectable programmable delay of lock lock

Quickly turn on (grid capacitance is 25,000 pounds/square feet)

Overvoltage turn off, overvoltage, Vcc gt; 26V

Can withstand 60V power transient

CMOS logic and open/off control input

Provide 8-pin SOIC (SO-8) package

] Application

Valve, relay and solenoid valve drive

Light drive

DC motor PWM drive

Logic control power distribution switch

Electronic Router


Absolute rated value (Note 1)

Power voltage 60V

Inverse power supply current 20 mAh 20 mAh

Output voltage VCC+15V

sensing and threshold voltage (to 1 k ) 25V to+60V

Open/off input voltage #8722; 0.3V to VCC+0.3V

Jacking temperature 150 ; C

Storage temperature 55 ; C to+150 ; C

Diversion wire Temperature

Welding, 10 seconds 260 ; C

Working value (Note 2)

Power voltage 7V to 26V

Open/off input input Voltage 0.3V to VCC

Environmental temperature range 40 ; C to+125 ; C

[θj-a)

LM9061M 150 ° C/W

DC PCG 7V ≤VCC ≤20V, RREF 15.4K , 40 ; C ≤TJ≤+125 ; Unless otherwise specified.

AC speed regulation feature 7V ≤VCC ≤20V, RREF 15.4K , 40 ; C≤tj ≤+125 ; C, CLOAD 0.025 μF, CDlay 0.022 μF, unless there are other regulations.

Note 1: Absolute maximum rated value indicates the limit value that may be damaged by the device.

Note 2: The working rated value indicates the conditions of the device's expected work, but may not meet the guarantee specific performance restrictions. See electrical characteristics to ensure the specifications and test conditions.

Note 3: ESD human model: 100 PF passes 1500 resistance.

Note 4: TOFF's communication timing specifications are not produced without production testing, so no special guarantee is made. The limit is for reference only. Smaller load capacitors will speed up and close the time accordingly.

Typical working waveform

Typical working waveform (continued)

Typical electrical characteristics [123

]

Application information

Basic operation

lm9061 contains one containing one The charge pump circuit can generate the power supply voltage grid drive voltage power MOSFET transistor that exceeds the casting voltage. Any size N ditrix power MOSFET, including multiple parallel connection MOSFETs for very high current applications, can be used to power the so -called high -end drive application to the ground reference load circuit. Figure 1 showsBasic application of LM9061.

When the logic 1 input instruction is 7, the door drive output, pin 4, and quickly rise to 5 VCC power potentials at the pin of the pin. Once the barricine voltage exceeds the threshold voltage of the grid pole source MOSFET, VGS (ON), (the source is through the load ground) MOSFET rotates and connects the power supply voltage to the load. Near the power potential, the charge pump continues to provide a gate voltage greater than the power supply to keep the MOSFET turn on. In order to protect the door MOSFET, the output voltage of the LM9061 is restricted to the maximum VG to 15V. The output current in the MOSFET gate comes from the VCC power pins. The VCC pin should pass through the capacitor. The value is at least 10 times that of the gate capacitance, and the door is usually 30 mA, and the VCC is 14V. When the gate voltage rises to the VCC, the output current will be reduced. When the gate voltage reaches VCC, the output current is often 1mA and VCC is 14V. The logic 0 on the pin 7 closed the MOSFET. When the command is turned off, the 110 μA current receiver is connected to the output pin. This current discharged grid capacitance MOSFET linear. When the gate voltage is equal to the power supply voltage (close to the power supply voltage) plus the VGS (on) threshold of MOSFET, the source voltage starts to follow the grid voltage towards the ground. Even if the source voltage is actually equal to 0V, the gate continues to be slope to zero, so as to turn off the power equipment. In some applications, the gradual cut -off characteristics (rather than the sudden reset of the gate -drive) can minimize the power consumption in the MOSFET or shorten the duration negative transient, such as the driver's induction load. If the control of the device with a large stress of the power supply is more smoothly output, the output wave current is only 10 μA (see the protection circuit part).

Open and close features

The actual change rate power device applied to the voltage applied to the gate directly depends on the input capacitance of the MOSFET used. These times are important to know whether to repeat the driver of the load supply and pulse width. Follow the capacitor from the gate to the drain, the source of the capacitance between CGD and the gate, CGS. Figure 2 detailed the interval in opening and closing the typical applications. Use an emotional load to explain the expected output transient voltage. At the time T1, the input of the opening/level becomes higher. Output, it drives the grid of MOSFET, and immediately pulls the grid voltage of the LM9061 VCC power supply. The source of the source 4 from the pin 4 is often 30 mAh, which is quickly charged from CGD and CGS. Once the gate reaches the VGS (ON) threshold of MOSFET, the switch is turned on and the power supply voltage begins to rise to the VCC. VGS residue is equal to threshold voltage until the power supply reaches VCC. When VGS does not change, only CGD is charging. When the source voltage reaches VCC, at T2, the charge pump is connected to the driver of the gate to ensure that the MOSFET is kept open.

ElectricityThe pump is basically a small internal capacitor obtained charge and transmitted it to the output pin. The clock rate is usually set to 300 kHz inside. In fact, the test pump as a switching capacitor resistor (about 67K) connects to the detection input pins of the voltage LM9061 with a voltage of more than 13V. The grid voltage rises to VCC in the form of index, time constant depends on the sum of CGD and CGS. But at this time, the load is fully powered. At Time T3, the oil supply pump reaches its maximum potential and switch to keep it connected. At the time T4, the input of the opening/off is low to close the MOSFET and cut off the power supply of the load. At this time, the charging pump was cut off, and the internal 110 μA current SINK began to discharge the grid input capacitance to ground. The discharge rate ( #8710; v/ #8710; t) is equal to 110 μA/(CGD)+CGS). The load is still completely power -on, until the T5 voltage has reached the potential of the source voltage (VCC) plus the VGS (ON) threshold voltage of MOSFET. Time T5 and T6, VGS voltage remains constant, and the source voltage follows the gate voltage. The CGD remains unchanged when the voltage is turned on, and now the discharge rate becomes 110 μA/CGD. In Time T6, with the movement of the gate, the source voltage reaches 0V lower than the VGS (ON) threshold, and MOSFET tries to close it. If the current in the load does not collapse to zero at T6, the operation of the MOSFET will generate a negative voltage transient transient (rejuvenation)

Application information (continued)

vgs; vgs (Open), because the MOSFET must reopen the continuous transmission load current until the inductance has dissipated (at T7). One of the unique features of the MOSFET protection circuit LM9061 is that it can perceive the excessive power consumption in MOSFET and lock it to prevent permanent failure. Instead of feeling that the current flowing through the MOSFET flow to the load usually requires a small power resistance string to be linked. LM9061 monitoring from drain to source, VDS, and MOSFET. This non -destructive technology allows all the energy provided by the power supply to be loaded as required. The only power loss is that the choice of MOSFET itself and the power supply of a specific application will minimize this problem. Another advantage of this technology is that all applications use only standard cheap 1/4W or smaller resistors. In order to use this non -destructive protection technology, we need to understand the key features of the power MOSFET. The focus of protection can be placed in any application whether the MOSFET or the current that the MOSFET that assumes the selected MOSFET can safely process the maximum load current.

In order to protect the MOSFET not exceeding its maximum coexist temperature rated value, the power consumption requires limited. The allowable maximum power consumption (reduced temperature) and the maximum leakage source of the resistance RDS (open), both are at the maximum working environment and need to be determined. WhenThe power consumption in MOSFET is:

The VDS voltage that limits the maximum power consumption is therefore: The actual load current and power difference will be the direct function of the actual RDS (on) directly function at any specific ambient temperature. The temperature of the power device exceeds its rated maximum value. The minimum RDS (opening) (minimum RDS (opening) of MOSFET for MOSFET is rarely specified than the required working temperature range. The maximum current of the load is:

The maximum current of the maximum mode of MOSFET can be limited by the monitor-

Application information (continued)

Set drainage drainage The maximum working value of the tube drops, VDS. In addition, if the load is inadvertently paid for the ground, the power supply equipment will be automatically closed. In all cases, whether the output leakage current should be switched to only 10 μA to gradually turn off the power supply device through the built -in protection comparator. Figure 3 illustrates the internal protection comparator. Two resistors are connected to the drain and source of the MOSFET to LM9061. Sensing input pipe pin 1 Monitor signal source is the threshold input needle 2 connected to the drain pipe, and it is also connected to the constant load power supply. Both inputs are two inputs of the protector. The voltage of the inductive input terminal is lower than the threshold input voltage, the protection comparator output becomes high, and the automatic lock shutdown function is activated to protect the power equipment. Therefore, the switch threshold voltage of the comparator directly measures the maximum value controlled by the MOSFET when the conduction load current is performed. The threshold voltage is set by the voltage drop -set resistor RTHRESHOLD. The reference current of resistance 6 is fixed. In order to accurately adjust the alternative of the benchmark current, a stable band gap quasi source provides voltage to biased constant streaming. This reference current through the following ways:

Reference current receiver output internal connection to the threshold pin. Iref flows out of RTHRESHOLD from the load power supply. The fixed voltage drop Rthreshold is about the maximum value of the VD of MOSFET before protecting the comparator. It must be noted that the reference current of programming is used for bias, so there are multiple uses and also directly affect the switching frequency on the internal charge pump. The optimized design of the LM9061 has a reference current of about 80 μA, and the RREF is set to 15.4 k ± 1%resistor. Recommended performance features 15.4 k resistor for RREF. The protection comparator configuration is normal working. When the output of the comparator is low, the differential input level of the comparator does not actually have a non -inverse input of the comparator in the factor. Therefore, only Iref flows through the resistor Rthreshold. The maximum current of all input deviation comparators input level is 20 μA (twice the Iseense specification of 10 μAHow to flow into the inverter input end through the resistance of each comparator input end) how to flow into the inverter input end through the resistance RSENSE. At the comparison threshold, the current of RSENSE is a Isense specification of no more than 10 μA.

要为任何特定应用定制VDS(最大)阈值,可根据以下公式选择电阻器RTHRESHOLD:

[123 ] Among them, RREF 15.4 k , Isense is a protector, RSENSE is the offset voltage that is connected to the pin 1 and VOS to protect the component (usually within the range of ± 10 mv). The resistor RSENSE is optional, but it is strongly recommended to improve it in order to provide transient protection for the sensory tube foot, especially when driving the sensor load. The minimum value is 1 k the transient-not-25V to+60V of the protection sales will not be subject to the following range. The resistor should be equal to or less than the resistor for resistance. Do not set RSENSE to value greater than Rthreshold. When the output of the protective component becomes high, the input total bias current phase is transferred from the detection pin to the threshold pin, thereby changing the voltage comparator at the input end. The consistency switching on the right side of the comparator is at the expected threshold point, and the voltage of the inverter input terminal should be equalized or exceeded at the non -reversing input (threshold).

In the automotive application, the load power supply may be the battery of the vehicle, while the VCC power supply of LM9061 is a thermal power supply. When the VCC power supply is turned off, people always care about the battery power of the current. The only current consumption condition below is that the leakage current that enters the threshold pin is less than 10 μA. The bypass container on RREF is optional, which helps to maintain a constant reference voltage in the application. The barrier container should not be greater than 0.1 μF, and most applications are not needed.

Delay timer

In order to enable MOSFET to transmit currents that exceed the protection threshold in a short time, the delay timer can be used to provide functions. This timer delays the actual lock that is closed within the programmable time interval. This characteristic is that the current exceeds the normal power current when the driver needs waves, or at any time, such as lamps and motors. Figure 4 detailed the delayed timer circuit. Capacitor delayed foot 8 grounding settings delay time interval. Open with MOSFET, all conditions are normal, and the output of the protector is low, which will keep the discharge transistor open. This transistor keeps delayed capacitors discharge. If the load current surge jumping the jumping gate is high, the discharge transistor is turned off, and the internal 10 μA current source linearity starts to charge the delay capacitor. If the surge current of the large VDS voltage continues for a long time, the comparative comparative threshold is usually 5.5V,The output of the comparator will

Application information (continued)

Set a trigger and immediately lock the MOSFET to close. Before the on/off input is switched to a low level, it will not be so high. The delay time interval is selected by selecting CDlay and can be found from it:

Among them, vtimer 5.5V, IDLAY 10μA.

The charging of the delay capacitor is fixed at 7.5V is the internal bias source of 10 μA current


minimum delay time

All applications are all applications The minimum delay time interval is required due to the nature of the protection circuit. The MOSFET was commanded by the command, and the voltage passed through the MOSFET and VDS, which is equivalent to a full -load power supply voltage, because the power supply is fixed on the ground. This situation will immediately make the protector's card. There is no minimum delay time. The timer will stick to the MOSFET lock, so that the load that is not allowed to be powered on. In order to prevent this, a delay capacitor 8 is required at the pin of the pins to ensure that the correct start of the carrier characteristics depends mainly on the load characteristic MOSFET to increase the load voltage to the induction input point greater than the threshold input (t start) (T starts) Essence If you need a specific minimum delay time characteristics, some experiments are needed. Therefore:

In the absence of specific delay time requirements, a value is recommended to 0.1 μF for CDlay.

Overvoltage protection

LM9061 will maintain a working voltage of up to+26V on VCC. If the VCC increases to more than a typical+30V, LM9061 will turn off the MOSFET to prevent excessive load voltage. When the VCC resumes the normal runtime, the device will be switched/off input to the normal operation. This function will allow MOSFET to continue running in the application of cyclical voltage transient, such as car applications. For load -to -high -voltage sensitive circuits, the circuit shown in Figure 5 can be used. A sensor input (pin 1) Zina will provide the reference voltage of the maximum protection comparator. It feels that the resistor requires a resistor to limit the Qina current. When the device is turned on, the load power supply is trying to be higher than (VZENER+V threshold), protect the comparator, and the delay timer starts. If the high -power voltage condition continues enough to delay the timer timeout, MOSFET will be locked. This switch input needs to switch to restart the MOSFET.

Reverse battery

LM9061 is not protected by the anti -polar power supply. If the VCC power supply should be negative, the current from the VCC pin should be limited to 20 mAh. Add a diode and suggest to use VCC input. The decline in this diode has not been expanded from the driving output voltage from the charge pump gateFight. Another feature of the battery electricity is less than LM9061 is the underwriting function (UVSO). The typical UVSO threshold is 6.2V and there is no delay. When the VCC is ensuring the minimum operating voltage of 7.0V and the UVSO threshold, the operation of the MOSFET gate driver, the delayed timer and the protection circuit are unreliable. Avoid operating in this area. When the VCC is lower than the UVSO threshold charge pump, the gate will discharge the current absorption rate when the gate is closed normally, usually 110 μA. Figure 6 shows the LM9061 circuit breaker used as an electronic circuit. The circuit provides low -voltage off, over -voltage atresses, and over -locking off. The low -voltage stop uses the opening and off voltage threshold, and the typical 1.2V lag to disable LM9061. The low -pressure stop completion the partial partial bias VCC. The voltage is the resistor of the voltage by R1 (30 k ), R2 (82 k ), and internal drop -down ON/OFF pins (a typical value of 30 k ). When running normally, the VCC will be higher than 7.0V, and the ON/OFF pin will be preferred to the maximum threshold of OFF is 1.5V (typical value is 1.8V). When the VCC drops to 7.0V, the voltage of the piping of the pins will be lower than the off threshold voltage and the LM9061 will be closed. In the case of the lock lock, the circuit can reset and close the main power, and then turn on. An optional, often open, switch (clear) from ON/OFF pins to ground, allow the button clearance circuit to lock off.

This type of pressure device requires a mechanical device to increase the ON/OFF pin to the ON threshold of 3.5V. When the VCC is less than 16V, the minimum value ( Typical value is 3.1V). This can be completed by the second frequent opening of the contact. Switching from ON/OFF pins on R2 (SET), so that the closing switch will make the voltage short circuit on the R2 and ON/OFF pins is usually half of the VCC. When VCC's minimum working voltage is 7.0V, this will make the ON/OFF pin bias about 3.5 volts, resulting in connecting LM9061. When VCC is usually above 16.5V, the resistor division will connect the/off pin bias to more than 3.5V, and the resistance R2 short circuit does not need.

The scale of the external resistance value

VCC and ON/OFF input pins, and the internal 30 k relative resistors can be used to increase the start voltage, is it important? Yes, the resistance ratio always has ON/OFF pin. When the VCC is lower than that of VCC, the deviation is less than 7.0V. The accuracy of the layout of this division is affected by the normal manufacturing variable voltage threshold and internal resistance value of the normal manufacturing variable voltage of opening and off . If any application needs to use greater accuracy when VCC is close to 7.0V,The external voltage should be driven by a monitor to drive/off. The external voltage monitor will also eliminate switching to short R2 to start LM9061 and R2.

Application information (continued)

Drives the MOSFET array

LM9061 is any need to connect MOSFET to provide the required load current. Only some common sense prevention measures need to be observed. All MOSFETs in the array must have the same electrical and thermal characteristics. This is all MOSFETs in the same parts of the same manufacturer. In addition, all MOSFETs should have the same style of radiator, or ideal, all are installed on the same radiator. The electrical connection MOSFET should have received special attention. With a typical RDS value within the range of tens of millome, one of the MOSFETs of a bad electrical MOSFET will make it on the circuit.

In addition, the minimum loss of MOSFET during the normal control of the grid capacitance is 70 μA and 110 μA typical, which needs to be considered. It is important to note that in the case of failure, the lock -off current (10 μA) may not be able to discharge the total grid capacitor in time to prevent MOSFET from damaging. Figure 7 shows a circuit with four parallel NDP706A MOS FET. This special MOSFET has a typical RDS (ON) TJ at 25 ° C. 0.013 , TJ is 0.020 When the threshold voltage of VDS is set to 500 MV, the circuit will provide a typical maximum load current of 150A 25 ; C, 125 ; C The typical maximum load current is 100A. The maximum power consumption of each MOSFET will be close to 20W at 25 ° C and 12.5W at 125 ° C. Each of the four devices is different. A effective cooling tablet will make TJ as low as possible to the maximum load current as possible during operation.

Increase the MOSFET opening time

LM9061 to quickly turn on MOSFET is an important factor in the management of MOSFET management Essence When turning on the MOS2FET, you should carefully operate the grid drive current. The average loss of MOSFET, and the delay time of LM9061, must be switched and switch conversion time. Figure 8 shows a method that increases the number of MOSFET turns on time and does not affect the shutdown time. Using this method door is the outer grid resistor and MOSFET grid capacitance charging at the index rate