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2022-09-23 17:22:28
IPB025N10N3G Original original genuine spot MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case:TO-263-7
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 180 A
Rds On-Drain Source On Resistance: 2 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 206 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode:Enhancement
Brand Name: OptiMOS
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Infineon Technologies
Configuration:Single
Fall Time: 28 ns
Forward Transconductance - Min: 100 S
Height: 4.4 mm
Length: 10mm
Product Type:MOSFET
Rise time: 58 ns
Series: OptiMOS 3
1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power-Transistor
Typical turn-off delay time: 84 ns
Typical turn-on delay time: 34 ns
Width: 9.25 mm
Part Number Alias: SP000469888 IPB25N1N3GXT IPB025N10N3GATMA1
Unit weight: 1.600 g