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2022-09-23 17:22:28
TAJE108K004RNJ
TAJE108K004RNJ_TAJE108K004RNJ Introduction
In Figure 1, we see that there is a diode between the D pole and the S pole. This diode is called a parasitic diode. The low-power MOS tube, such as the MOS tube in the integrated chip, is a planar structure, and the drain lead-out direction is from the top of the silicon wafer, that is, in the same direction as the source, and there is no such diode. After checking some information on the Internet, I found out that it is caused by the production process. The drain of the high-power MOS tube is drawn from the bottom of the silicon chip, and there will be this parasitic diode. How did the parasitic diodes of MOS come from? Open the analog circuit book in the university and there is no introduction of parasitic diodes.
TAJE108K004RNJ_TAJE108K004RNJ
TAJB106K016RNJ
STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.
FDS6990-NL HAT2092R HAT2092RJ IRF8313TRPBF MDS5601URH.
Some MOSFETs will have a diode inside, which is a body diode, or a parasitic diode or a freewheeling diode.
TPC8223-H UPA2750GR 4936 9936 4228GM.
TAJE108K004RNJ_TAJE108K004RNJ
TAJB685M006RNJ
BYH343 BYM3411 BYP342 BYS342 BYM345.
BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.
Let’s talk about the characteristics of MOS/CMOS integrated circuits first: the manufacturing process is relatively simple, the yield is high, the power consumption is low, the logic circuit is relatively simple, the integration degree is high, and the anti-interference ability is strong, especially suitable for large-scale integrated circuits. .
BYM3312 BYM3312-X BYF333 BYP332 BYS332.
TAJE108K004RNJ_TAJE108K004RNJ
At the time of t3, the DS voltage of the MOSFET drops to the voltage at the time of saturation conduction, the influence of the Millier effect becomes smaller, the Cgd capacitor becomes smaller and is charged by the external driving voltage together with the Cgs capacitor, and the voltage of the Cgs capacitor rises until the time of t4. When the C gs capacitor voltage has reached a steady state, the voltage between DS has reached a minimum, and the MOSFET is fully turned on.
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