TAJE108K002RNJ_TAJE108K002RNJ Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, it also provides Fenghua resistance-capacitance sense, long-crystal two-transistor MOS transistors, Epson active and passive crystal oscillators, etc.

TAJE108K002RNJ_TAJE108K002RNJ

TLJK686M006R2000

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency.

Some MOSFETs will have a diode inside, which is a body diode, or a parasitic diode or a freewheeling diode.

But there are parasitic diodes between the D pole and the substrate. If it is a single transistor, the substrate is of course connected to the S pole, so there is naturally a diode between the DS. So what does the parasitic diode do? When a large instantaneous reverse current is generated in the circuit, it can be derived through this diode, so as not to break down the MOS tube. (plays the role of protecting the MOS tube). The analog circuit book talks about the structure of low-power MOS tubes, so there is no such diode. If in the IC, the N-MOS substrate is connected to the lowest voltage, and the P-MOS substrate is connected to the highest voltage, which is not necessarily connected to the S pole, so there is not necessarily a parasitic diode between DS.

TAJE108K002RNJ_TAJE108K002RNJ

TAJD476M035RNJ

BYP336 BYT337 BYS334 BYS345 BYP346.

0603180R5%_06031M5%_06032.2K5%_0603220R5%_060322K5%_.

BYP32028 BYS32010 BYJ32027A BYH326 BYH323.

BYH343 BYM3411 BYP342 BYS342 BYM345.

TAJE108K002RNJ_TAJE108K002RNJ

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

relevant information