IPW65R041CFD

Manufacturer: Infineon

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: Through Hole

Package/Case:TO-247-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 650 V

Id-Continuous Drain Current: 68.5 A

Rds On-Drain Source On Resistance: 37 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 3.5 V

Qg-gate charge: 300 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd - Power Dissipation: 500 W

Channel Mode:Enhancement

Brand Name: CoolMOS

Package:Tube

Trademark: Infineon Technologies

Configuration:Single

Fall Time: 8 ns

Height: 21.1 mm

Length: 16.13 mm

Product Type:MOSFET

Rise time: 28 ns

Series:CoolMOS CFD2

240

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 127 ns

Typical turn-on delay time: 34 ns

Width: 5.21 mm

Part number alias: IPW65R41CFDXK SP000756288 IPW65R041CFDFKSA1

Unit weight: 6 g

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