TAJD686M010RNJ_TAJD686M010RNJ Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

TAJD686M010RNJ_TAJD686M010RNJ

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But there are parasitic diodes between the D pole and the substrate. If it is a single transistor, the substrate is of course connected to the S pole, so there is naturally a diode between the DS. So what does the parasitic diode do? When a large instantaneous reverse current is generated in the circuit, it can be derived through this diode, so as not to break down the MOS tube. (plays the role of protecting the MOS tube). The analog circuit book talks about the structure of low-power MOS tubes, so there is no such diode. If in the IC, the N-MOS substrate is connected to the lowest voltage, and the P-MOS substrate is connected to the highest voltage, which is not necessarily connected to the S pole, so there is not necessarily a parasitic diode between DS.

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

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BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

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The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

BYP32028 BYS32010 BYJ32027A BYH326 BYH323.

TAJD686M010RNJ_TAJD686M010RNJ

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

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