TAJD686K025RNJ_TAJD686K025RNJ Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

TAJD686K025RNJ_TAJD686K025RNJ

TAJE477K010RNJ

AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.

Some MOSFETs will have a diode inside, which is a body diode, or a parasitic diode or a freewheeling diode.

STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

FDS6990-NL HAT2092R HAT2092RJ IRF8313TRPBF MDS5601URH.

TAJD686K025RNJ_TAJD686K025RNJ

TAJD475K050RNJ

Let’s talk about the characteristics of MOS/CMOS integrated circuits first: the manufacturing process is relatively simple, the yield is high, the power consumption is low, the logic circuit is relatively simple, the integration degree is high, and the anti-interference ability is strong, especially suitable for large-scale integrated circuits. .

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

TAJD686K025RNJ_TAJD686K025RNJ

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

relevant information