TAJC685K035RNJ_TAJC685K035RNJ Introduction

1) The parasitic diode of the MOSFET is used to prevent the MOS tube from being burned out in the case of VDD overvoltage, because before the overvoltage damages the MOS tube, the diode first reverses breakdown and directs the large current to the ground, thereby avoiding The MOS tube is burnt out. MOSFET has the characteristics of high input impedance, fast switching speed, good thermal stability, and voltage control of current. In circuits, it can be used as amplifiers, electronic switches and other purposes. . 2), prevent the MOS tube from burning out when the source and drain of the MOS tube are reversely connected, and also provide a path for the reverse induced voltage when the circuit has a reverse induced voltage, so as to prevent the reverse induced voltage from breaking down the MOS Tube.

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TAJC685K035RNJ_TAJC685K035RNJ

The circuit that makes the transistor work only in the 1 and 3 states is called a switching circuit. Generally, the transistor is turned off, and the collector does not absorb current to indicate the off; when the transistor is saturated, the voltage difference between the emitter and the collector is close to 0V. .

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