Features

Three 1/2 hours bridge drivers IC

- Three -phase brushless DC motor

- DC Motor

High current driver capacity: 2.5-a peak value

low MOSFET pitch resistance

independence 1/2 h Bridge control

Non-promised comparator can be used for current limit or other functions

built-in 3.3-V 10 ma LDO regulator

# 8226; 8-V to 60-V working power supply voltage range

Sleep mode in the standby state

] - 28 needle htssop (Power Board #8482; Packaging)

–36 needle vqfn

camera universal knight

[123

] HVAC motor

office automation machine

Factory automation and robot technology

] DRV8313

provides three individual controllable half -bridge drivers. The device aims to drive a three -phase brush -free DC motor, although it can also be used to drive the thread tube or other loads. Each output drive channel is composed of N -channel power MOSFET and is configured in the 1/2 H bridge configuration. Each 1/2 H bridge driver has a dedicated ground terminal, allowing independent external current influenza.

Integrated an unprepared comparator in DRV8313, allowing constructing a current -limited circuit or other functions.

The internal protection function can be used for under pressure, charge pump failure, overcurrent, short circuit and overheating. The fault conditions are indicated by the NFAULT pin.

Equipment information

(1), please refer to the appointment appendix at the end of the data table.

Simplified schematic diagram

Switching features

TA 25 ° C, vm 24 v, rl 20Ω.

Typical features

Detailed description

Overview

DRV8313 integrated three independent 2.5Half -high bridge, protection circuit, dormant mode, fault report and a comparator. The single power supply supports a wide range of 8-V to 60-V range, making it very suitable for motor-driven applications.

Figure Figure

Feature description

output level

DRV8313 contains three semi -bridge drivers. The source of the low -side FET of all three and a half HBRIDGE is terminated at a separate pins (PGND1, PGND2, and PGND3) to allow the low -side current detection resistor on each output (if necessary). Users can also connect these three sensors to a low -voltage -side detection resistor, or if they do not need current influenza, they can also directly connect them to the ground.

If the low -pressure side induction resistor is used, the voltage on the PGND1, PGND2 or PGND3 pins does not exceed ± 500 mv.

The device has two VM motor power sources. Connect the two VM pins to the motor power supply voltage.

Bridge control

Inx input pin directly controls the status (high or low) of the outx output; ENX input pins to enable or disable the OUTX driver. Table 1 shows the logic:

The oil supply pump

Since the output level uses the N groove FET, the device needs to be higher than the VM power supply voltage To fully enhance the high side FET. DRV8313 integrates a charge pump circuit, which can generate voltage higher than the VM power supply.

The charge pump requires two external capacitors to work. For detailed information about these capacitors (values, connections, etc.), please refer to the box diagram and pipe foot instructions.

When nsleep is low, the charging pump is closed.

Comparison

DRV8313 includes an unprepared comparator, which can be used as a current limitation comparator or for other purposes.

FIG. 12 shows the connection of using the comparator to detect the current to implement the current limit. The current from all three low -side effects crystal pipes uses a low -side detection resistor sensor. Compare the voltage of the sensor and the benchmark voltage. When the sensing voltage exceeds the benchmark value, the signal of the current limit condition to the controller is sent to the controller. The V3P3 internal voltage regulator can be used to set the reference voltage of the comparator.

Protection circuit

DRV8313 has comprehensive protection of under pressure, over current and overheating events.

IOU locking (UVLO)

If the voltage on the VM pins is lower than the underwriting threshold voltage (VUVLO) at any time, HBAll fets in Ridge will be disabled, the charge pump will be disabled, the internal logic will be reset, and the NFAULT pin will be driven to a low level. When VM is higher than the UVLO threshold, the operation will be restored. After recovery, the NFAULT pin will be released.

Hot shutdown (TSD)

If the mold temperature exceeds the safety limit, all FETs in the H bridge will be disabled, and the NFAULT pin will be driven to a low level. Once the mold temperature drops to the safe level, the operation will automatically restore. After recovery, the NFAULT pin will be released.

Overcurrent protection (OCP)

The analog current limit circuit on each FET is limited to the current by removing the grid driver. If this analog current limits the duration of TOCP, the device will disable the channel that has undergone current and drives a low NFAULT pin. The driver will be closed until NRESET or cycle VM power supply is asserted.

Overcurrent situations on high -voltage and low -voltage side devices, that is, short -circuit, short -circuit of power supply, or short circuit of motor winding, can cause overcurrent stops.

Equipment function mode

Unless Nsleep's pin logic is low, DRV8313 is activated. In the dormant mode, the charge pump is disabled, the output FET is disabled HI-Z, and the V3P3 regulator is disabled. If NSLEEP logic is high, DRV313 will automatically exit the dormant mode.

reset and reset operation

When the low is driven, all the failure is reset. When it is active, it also disables the output driver. When NRESET is active, the device ignores all inputs. Note that there is an internal power -to -power reset circuit, so you do not need to drive reset when power -on.

Drive NSLEEP low to enable the device to enter a low -power sleep state. Entering this state will disable the output drive, stop the grid drive charge pump, reset all internal logic (including faults), and stop all internal clocks. In this state, the device ignores all input until NSLEEP returns Inactive High. When returning from the dormant mode, the motor drive must be fully worked after a period of time (about 1 millisecond). The V3P3 regulator keep working in dormant mode.

Application and implementation

Note

The information in the following application chapters is not part of the TI component specification. TI does not guarantee its accuracy Or integrity. TI's customers are responsible for determining the applicability of the component. Customers should verify and test their design implementation to confirm the system function.

Application information

DRV8313 can be used to drive brushless DC motors, with brushing DC electricityMachine and solenoid valve load. The following design process can be used to configure DRV8313.

Typical application

Three -phase brushless DC motor control

In this application, DRV8313 is used to drive brushless DC motors.

Design requirements

Table 4 gives system design design input parameters.

Detailed design program

motor voltage

The rated voltage of the brushless DC motor is usually a certain voltage (eg, 12 volts and 24 24, 24 24 and 24 24 Volume). Operate the motor at a lower voltage to a lower driver current to obtain the same motor power. The higher working voltage also corresponds to higher speed. Since the maximum VM rated value is 60 V, DRV8313 allows the use of higher working voltage.

It is usually more accurate to control the phase of the phase at a lower voltage. The working voltage of DRV8313 is 8V.

The motor direction

DRV8313 can drive trapezoidal (120 °) and sine (180 °) direction, which is due to independent control of three 1/2-H bridges.

Support synchronous rectification and asynchronous rectification. Synchronous rectification is achieved by entering the vein width (PWM) input signal to the INX pin when driving. Users can also achieve asynchronous rectification by applying the PWM signal to the ENX input terminal.

Application curve

Three -phase brushless DC motor control with a current monitor

In this application, DRV8313 is used to drive a brushless DC motor and an unprepared comparator. 123] Table 6 gives system design design input parameters.

Detailed design program

Statement current

The configuration of the unsurbusted comparison device makes the negative input compn connect to the PGNDX tube foot. Place a sensor resistance between PGNDX/Compn pin and GND.

The voltage on the COMPP pin will set the current monitor to check the threshold. In this case, when the company and COMPN have the same potential, the status of the NCOMPO tube foot will change.

Example: If you need to check the current is 2.5 a;

Set RSENSE 200 m #8486;;

Compn must be mustMust be 0.5 volts.

Create a resistor separator from V3P3 (3.3V) to set Compn≈0.5V.

Set R2 10 k #8486;, set R1 56 K #8486;.

sensing resistor

In order to obtain the best performance, sensing resistors must have the following characteristics:

surface installation

#8226; Low inductance

The rated power is high enough

near the motor drive

The power consumption of sensor resistance is equal to IRMS 2 × R Essence For example, if the RMS motor current is 1A and 200 m #8486; induction resistor, the resistor will consume 1 A2 × 0.2 #8486; 0.2 W. With the rise of current levels, power increases rapidly.

The resistor usually has a rated power within a certain ambient temperature range, and the reduction power curve at high ambient temperature. When a PCB is shared with other heating elements, the balance should be increased. The actual sensing resistance temperature in the final system and power MOSFET are always the best because they are usually the hottest components.

Because the power resistance is larger and more expensive than the standard resistance, it is a common approach to use multiple standard resistors between the sensing nodes and the ground. This structure distribution current and heat dissipation.

There are DC and electromagnetic loads

Design requirements

Table 7 gives system design design input parameters.

Detailed design program

Three solenoid valve loads

Design requirements

Table 10 gives system design design input parameters.

Detailed design program

Power suggestion

Body capacitor In the design of the motor drive system, it is an important factor with a suitable local volume capacitor. Generally speaking, more volume capacitors are beneficial, but the disadvantage is increased cost and physical dimensions.

The required local power capacity depends on multiple factors, including:

the highest current required for the motor system

capacitance of the power supply And current capacity

Positive inductance between the power supply and the motor system

acceptable ripple voltage

Electrical braking method

The inductance between the power supply and the motor drive system limits the rated current change of the power supply. If the local large -capacity capacitance is too small, the system responds to the large current requirements of the motor according to the voltage change or the reserves of the storage. When using sufficient large -capacity capacitors, the motor voltage remains stable and can quickly provide large current.

The data table usually provides a recommended value, but it is necessary to perform system -level tests to determine large -capacity capacitors with appropriate size.

The rated voltage of a large -capacity capacitor should be higher than the operating voltage, so that it can provide a lot of time when the motor transmits energy to the power supply.

Layout

Layout Guide

The placement of large -capacity capacitors should be reduced as much as possible to drive the distance from the large current path of the motor -driven device. The width of the metal trace line should be as wide as possible, and multiple excess perforated should be used when connecting the PCB layer. These methods minimize the inductance and allow large capacitor to transport high current.

Small capacitors should be ceramic and placed in a place where the device pin is very close.

The output of high -current equipment shall use wide metal traces.

The equipment hot pad should be welded on the floor floor floor of the PCB. Multiple pores should be used to connect to large bottom ground planes. Use large metal planes and multiple holes to help the I2 × RDS (ON) heat generated in the dissipation device.

In Figure 19 and 20, the comparators that were not submitted were not used. Because in this case, COMPP, Compn, and Compo pins are connected to GND.

layout example

Hot precautions

As mentioned earlier, DRV8313 has hot shutdown (TSD). The mold temperature exceeding 150 ° C (minimum limit) will make the equipment fail until the temperature drops to the safety level.

Any trend of the equipment entering the heat shutdown indicates that the power consumption is too large, the heat dissipation is insufficient or the ambient temperature is too high.

Heating

PowerPad package uses exposed pads to remove the heat in the device. In order to correctly operate, the pad must be connected to the copper heat on the PCB to dissipate heat. On the multi -layer PCB with ground layers, add multiple pores to connect the hot pad to the ground plane to achieve this. On PCB without internal planes, add copper areas to any side of the PCB to dissipate heat. If the copper area and the device are on the other side of the PCB, use the heating hole to pass the heat between the top and the bottom layer.

Generally speaking, more copper area is providedCan consume more power.

Power consumption

In DRV8313, the power consumed in the output FET resistance or RDS (on) controls the power consumption.When running a static load, the average power consumption of each semi -H bridge is slightly estimated:

pThe power consumption of the bridge,

RDS (ON) is the resistance of each fet, and

IOUT is equal to the average current consumed by the load.

Under the condition of starting and failure, the current is much higher than the normal operating current; remember to consider these peak currents and its duration.

The total device loss is the power consumption of each of the three and a half H bridge.

The maximum power that the device can consume depends on the ambient temperature and heat dissipation.

Note that RDS (on) increases as the temperature increases, so when the device is heated, the power consumption will increase.When determining the size of the radiator, consider this.