TAJD475K035RNJ_TAJD475K035RNJ Introduction

. The structure and classification of MOS tubes, there are two main types of field effect transistors, namely junction field effect transistor (JFET) and insulated gate field effect transistor (MOS tube).

TAJD475K035RNJ_TAJD475K035RNJ

TAJA336M006RNJ

057N08N 057N08NS 05852- 06000,, 06031.5K5%_.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

But there are parasitic diodes between the D pole and the substrate. If it is a single transistor, the substrate is of course connected to the S pole, so there is naturally a diode between the DS. So what does the parasitic diode do? When a large instantaneous reverse current is generated in the circuit, it can be derived through this diode, so as not to break down the MOS tube. (plays the role of protecting the MOS tube). The analog circuit book talks about the structure of low-power MOS tubes, so there is no such diode. If in the IC, the N-MOS substrate is connected to the lowest voltage, and the P-MOS substrate is connected to the highest voltage, which is not necessarily connected to the S pole, so there is not necessarily a parasitic diode between DS.

TAJD475K035RNJ_TAJD475K035RNJ

TAJC684M050RNJ

0603180R5%_06031M5%_06032.2K5%_0603220R5%_060322K5%_.

BYP336 BYT337 BYS334 BYS345 BYP346.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

Then the high level of the GPIO connected to G must be above 2.8-0.4=2.4V, so that the mos tube can be turned off, and the low level can turn the mos tube on. If the voltage area of the GPIO that controls G is 1.8V, then when the GPIO is high, it is 1.8V, and the GS is 1.8-2.8=-1V, and the mos tube is turned on and cannot be turned off. In this case, the GPIO cannot control the on and off of the mos tube. When GPIO is low, if 0.1V, then GS is 0.1-2.8=-2.7V, and the mos tube is turned on.

TAJD475K035RNJ_TAJD475K035RNJ

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

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