TAJD337M010RNJ_TAJD337M010RNJ Introduction

In Figure 1, we see that there is a diode between the D pole and the S pole. This diode is called a parasitic diode. The low-power MOS tube, such as the MOS tube in the integrated chip, is a planar structure, and the drain lead-out direction is from the top of the silicon wafer, that is, in the same direction as the source, and there is no such diode. After checking some information on the Internet, I found out that it is caused by the production process. The drain of the high-power MOS tube is drawn from the bottom of the silicon chip, and there will be this parasitic diode. How did the parasitic diodes of MOS come from? Open the analog circuit book in the university and there is no introduction of parasitic diodes.

TAJD337M010RNJ_TAJD337M010RNJ

TAJD476K016RNJ

STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency.

040N06N 042N03L 042N03MS 043N03MS 045N10N.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

TAJD337M010RNJ_TAJD337M010RNJ

TAJB105M035RNJ

The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

051N15N5MOS 052N06L 053P04-518 054NE8N 057N06N.

060322R5%_0603270K5%_0603270R5%_060327K5%_0603330R5%_.

MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits. The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed.

TAJD337M010RNJ_TAJD337M010RNJ

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

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