TAJD336M035RNJ_TAJD336M035RNJ Introduction

The structure of the N-channel enhancement mode MOS transistor is made on a P-type silicon substrate with a low doping concentration, and two N+ regions with a high doping concentration are made, and two electrodes are drawn out with metal aluminum, which are used as the drain d and the source respectively. pole s. Then cover the semiconductor surface with a thin layer of silicon dioxide (SiO2) insulating layer, and install an aluminum electrode on the insulating layer between the drain and the source as the gate g.

TAJD336M035RNJ_TAJD336M035RNJ

TAJA226K004RNJ

TAJA226M010RNJ TAJA226M016RNJ TAJA334K035RNJ TAJA334K050RNJ TAJA334M035RNJ TAJA334M050RNJ TAJA335K006RNJ TAJA335K010RNJ TAJA335K016RNJ TAJA335K020RNJ .

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

Some MOSFETs will have a diode inside, which is a body diode, or a parasitic diode or a freewheeling diode.

TAJD336M035RNJ_TAJD336M035RNJ

TAJD336M025RNJ

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYI3245 BYN3226 BYN3232 BYS326 BYD32515Z.

The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

Then the high level of the GPIO connected to G must be above 2.8-0.4=2.4V, so that the mos tube can be turned off, and the low level can turn the mos tube on. If the voltage area of the GPIO that controls G is 1.8V, then when the GPIO is high, it is 1.8V, and the GS is 1.8-2.8=-1V, and the mos tube is turned on and cannot be turned off. In this case, the GPIO cannot control the on and off of the mos tube. When GPIO is low, if 0.1V, then GS is 0.1-2.8=-2.7V, and the mos tube is turned on.

TAJD336M035RNJ_TAJD336M035RNJ

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

relevant information