TAJD336M025RNJ_TAJD336M025RNJ Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

TAJD336M025RNJ_TAJD336M025RNJ

TAJA476K006RNJ

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

FDS6990-NL HAT2092R HAT2092RJ IRF8313TRPBF MDS5601URH.

TAJD336M025RNJ_TAJD336M025RNJ

TAJD685K035RNJ

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits. The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed.

BYH343 BYM3411 BYP342 BYS342 BYM345.

TAJD336M025RNJ_TAJD336M025RNJ

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

relevant information